氮化銦鎵量子井結構發光二極體之光學特性分析以及奈米碳管之拉曼光譜研究

Optical Analyses of InGaN MQW Light-Emitting Diodes and Raman Spectroscopy Studies on Carbon Nanotubes

黃建霖(Chien-Lin Huang)

指導教授 ： 馮哲川

國立臺灣大學/電機資訊學院/光電工程學研究所/碩士(2010年)

https://doi.org/10.6342/NTU.2010.00140

摘要

無資料

關鍵字

氮化銦鎵量子井結構發光二極體 ； 奈米碳管 ； 拉曼光譜

並列摘要

This thesis mainly divides into two parts: the first part is analyzed the optical properties of InGaN/GaN multi-quantum wells LED structure. The Raman scattering, photoluminescence (PL), photoluminescence excitation (PLE), time-resolved photoluminescence (TRPL) experiments were carried out to study the optical properties; the second part is the studies on carbon nanotubes (CNTs) by Raman spectroscopy.
First, we compared the optical properties with different well widths and different growth time of epitaxial lateral overgrowth GaN layer for an InGaN/GaN quantum well structure. The research reports mentioned in Chapter 3 will give us the information about different well widths effects. From the Photoluminescence, photoluminescence excitation and time-resolved photoluminescence experiments, we can find that the luminescence efficiency is higher and the carrier lifetime is longer for the sample with wider well width. Furthermore, the measurement results of different growth time of epitaxial lateral overgrowth GaN layer for an InGaN/GaN quantum well structure will be discussed in Chapter 4. We can observe that a larger Stokes shift results from longer growth time of epitaxial lateral overgrowth GaN with (112‾2) facets. The experimental results shown here can serve as important clue for the enhancement of the luminescence efficiency in the future optoelectronic devices.
Second, we attend to investigate the Raman scattering spectroscopy and fittings on carbon nanotube (CNT) samples. In Section 5.1 we analyzed the Raman spectroscopy about Cu nanoparticles and microfibers prepared by solid state reaction using carbon nanotube as template. Then we discussed the relation between Raman signals and field emission properties of pure CNT arrays with different growth conditions in Section 5.2. Besides, there were some electron microscope, X-ray diffraction, and X-ray absorption measurements of CNT samples.

並列關鍵字

InGaN MQW Light-Emitting Diodes ； Carbon Nanotubes ； Raman Spectroscopy

參考文獻

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