以掃描穿隧顯微術研究氫鈍化之矽(100)-2x1表面下摻雜誘發之表面特徵

Investigation of Subsurface Dopant-Induced Features on Si(100)-2x1:H Surface by Scanning Tunneling Microscopy

歐育陞(Yu-Sheng Ou)

指導教授 ： 陳永芳

共同指導教授 ： 張嘉升(Chia-Seng Chang)

國立臺灣大學/理學院/物理研究所/碩士(2008年)

https://doi.org/10.6342/NTU.2008.00192

摘要

由於表面能態之消除，使氫鈍化之矽(100)-2x1表面下之摻雜得以被觀察。在本篇論文當中，表面下硼誘發於氫鈍化之矽(100)-2x1表面之特徵以超高真空顯微術觀察。對所有在本實驗所觀察到的硼誘發之表面特徵,可以藉著其形貌及振幅的不同而大略的區分不同的誘發特徵。這些硼誘發之表面特徵的差異是由於表面非等向結構所造成表面非等向的電子結構影響處在不同位置的硼摻雜所誘發之表面特徵的行為。更近一步分析於不同偏壓下特定表面特徵的延展行為發現該特徵局部非等向性的延展行為顯現表面非等向晶格結構確實影響摻雜誘發之特徵的行為。

關鍵字

超高真空 ； 掃描穿隧能譜術 ； 矽(100)-2x1表面 ； 氫鈍化 ； 硼摻雜 ； 探針誘發能帶彎曲效應 ； 非等向性延展

並列摘要

Hydrogen-passivated Si (100)-2x1 surface enables the observation of subsurface dopant because of elimination of surface states. In this thesis, boron-induced features on Si(100)-2x1:H surface are studied by ultrahigh vacuum scanning tunneling microscopy. For all the features we have observed, different types of boron-induced features can be roughly distinguished in terms of appearances and amplitudes. The divergence between these features are due to that surface anisotropic lattice structure contributing anisotropic electronic structure affects the behavior of these boron-induced features, induced by boron located in different sites. Furthermore, by analyzing the extension behavior of a specific boron-induced feature at different sample bias, the local anisotropic extension reflects that anisotropic surface lattice structure indeed influence the behavior of the boron-induced feature.

並列關鍵字

ultra high vacuum (UHV) ； scanning tunneling microscopy (STM) ； Si(100)-2x1 ； hydrogen passivation ； boron dopant ； tip-induced band bending effect

參考文獻

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