表面處理對金屬閘極功函數的影響 以及鐿佈植對低摻雜汲極的影響

The Effect of Interfacial Treatment to Work Function of the Metal Gate and the Implantation of Ytterbium to the Lightly Doped Drain Area

陳俊宏(Jyun-Hong Chen)

指導教授 ： 吳志毅

國立臺灣大學/電機資訊學院/光電工程學研究所/碩士(2007年)

https://doi.org/10.6342/NTU.2007.00244

摘要

當CMOS元件逐漸縮小，在金氧半電容元件上使用金屬閘極會有較佳的表現，傳統的多晶矽閘極被本身的材料特性--閘極空乏效應所限制，此效應會降低元件的電容值,使得操作電壓的上升，使閘極空乏區將增加3-5A的有效厚度( EOT )，增加的空乏區厚度在日益縮小的元件製程,所造成的影響已經不能忽略,因此我們希望找出可以調變金屬功函數的方法，利用金屬閘極，取代半導體閘極。

在論文的第二部分，我們討論將鐿佈植到低摻雜汲極處的效果，以及經過不同溫度和時間退火後，整個試片的片電阻表現，期望可以找到適當的製程條件，降低低摻雜汲極處的電阻，進一步改善元件的操作速度。

關鍵字

功函數 ； 表面處理 ； 鐿

並列摘要

With CMOS is scaling down, using metal gate will make devices perform better. Traditional poly-gate is restricted by material characteristic - gate depletion effect. The effect will decrease the gate capacitance, and increase the operation voltage. The depletion width will broaden about 3-5 angstrom, which is not accepted by the advanced semiconductor technology.
So we expect to find some simple ways to tune metal work function in order to replace poly-silicon gate with metal gate.

Second part, we want to discuss the influence of the implanted ytterbium to the lightly doped drain region and the sheet resistance of the samples after they are annealed at different temperature and time. We expect to decrease the sheet resistance of LDD area and to enhance the speed of device.

並列關鍵字

work function ； surface treatment ； ytterbium

參考文獻

31.Rashmi Jhaa and JaeHoon Lee, Prashant Majhi, Veena Misra APPLIED PHYSICS LETTERS 87, 223503 2005

28.D. Qiao, L. S. Yu, S. S. Lau, J. Y. Lin, H. X. Jiang, and T. E. Haynes J. Appl. Phys. 88, 4196 (2000) .

5.Torres, and R. Pantel, Tech. Dig. - Int. Electron Devices Meet., 2001, 825.

6.M. Qin, V. M. C. Poon, and S. C. H. Ho, J. Electrochem. Soc., 148, G271 ~2001

19.W. Walukiewicz, Phys. Rev., B37, No. 9, 4760–4763 (1988)