藉由矽基板上孔洞陣列內部形貌的調控實現鍺量子點的有序成長

Growth of well-aligned Ge quantum dots by adjusting the inner morphology of nano-hole array on Si substrate

李健鴻(Chien-Hung Lee)

指導教授 ： 管傑雄

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2010年)

https://doi.org/10.6342/NTU.2010.00527

摘要

本篇論文針對如何達到鍺量子點的有序排列以及鍺量子點大小均勻一致性做一系統性的研究與探討。
藉由電子束微影技術，於矽基板上製作圓形奈米孔洞陣列，搭配超高真空化學氣相沉積系統，運用自我組織成長科技，使得每一個圓形奈米孔洞中，能夠成長唯一一個鍺量子點。實驗中調變了孔洞內部表面形態、孔洞陣列週期與孔洞直徑大小以達成最佳的排列次序與大小的一致性。所有樣品皆經由掃描式顯微鏡和原子力顯微鏡量測。最後引進化學能模型，分析其中之物理機制，並期望預測鍺量子點成長於矽基板上的分部形態。

關鍵字

鍺量子點 ； 有序排列 ； 化學能模型 ； 電子束微影 ； 自我組織成長

並列摘要

This thesis discusses systematically about how to achieve the well-aligned and size-homogeneous germanium quantum dots (Ge QDs).
The Si (001) substrates were fabricated by electron beam (E-beam) lithography and reactive ion etching (RIE), which result in circle-shape periodic nano-patterned on the surface. Then, Ge QDs were grown on the circle-patterned Si (001) template in ultrahigh vacuum chemical vapor deposition (UHV-CVD) chamber using Stranski-Krastanow (SK) growth mode. We successfully realize one Ge QD in one hole by modulating the inner morphology of hole array, the pitch of hole array, and the size of hole array. The samples were measured with scanning electron microscope (SEM) and atomic force microscope (AFM). Finally, we propose applying chemical potential model to understand physical mechanism of alignment of Ge QDs and also hope to forecast experiment results.

並列關鍵字

germanium quantum dots (Ge QDs) ； well-aligned ； chemical potential model ； E-beam lithography ； S-K growth mode

參考文獻

[2] Prof. C.H. Yang, Department of Electrical and Computer Engineering, University of Maryland (2001)

[3] Z. F. Ren, et al, Science 282, 1105 (1998)

Si(100)”,Phys. Rev. Lett.(1990).

[3] Kamins et al, J. Appl. Phys., Vol. 81, No. 1, 1 January (1997)

[4] P. Schittenhelm, M. Gail, and G. Abstreiter, J. Cryst. Growth 157, 260 (1995)