寬頻雙饋入分佈式功率放大器

Broadband dual-feed distributed power amplifier

衛宣安(Shuan-An Wei)

指導教授 ： 盧信嘉

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2011年)

https://doi.org/10.6342/NTU.2011.00771

摘要

本論文搭配主被動製程，實現一種包含UWB頻段的寬頻功率放大器，主動晶片部分是以TSMC 0.18μm CMOS製成，搭配兩種被動製程，分別為璟德(Advanced Ceramic X Corp., ACXC)公司的低溫共燒陶瓷(low temperature co-fired ceramics, LTCC) 製程與國家晶片中心(CIC)所提供的積體被動元件(intergrated passive device, IPD)製程，並利用覆晶技術結合主被動製程。
我們採用類似分佈式放大器架構，並利用左右手傳輸線的匹配方式來提昇S21的頻寬，並且拿掉了傳統分佈式放大器的匹配電阻，以期增加電路的附加效率，但去除匹配電阻會增加電路的反射損耗，所以我們利用平衡式放大器的原理，搭配寬頻的正交分相器來增加電路的S11、S22頻寬。整體而言，我們改善了寬頻功率放大器的頻寬、附加效率與線性度。在3.1 GHz到10.6GHz的頻帶內，我們功率附加效益19~24.5%，增益10.8±1dB，輸出功率OP1dB有14.6~16dBm，OIP3達到26.6~27 dBm。

關鍵字

功率放大器 ； 分佈式放大器 ； 超寬頻 ； 雙饋入放大器

並列摘要

This thesis presents the implementation of ultra-wide band power amplifier by combining both active and passive processes. The active process we used is TSMC 0.18μm CMOS and two passive processes we used are low temperature co-fired ceramics (LTCC) provided by Advanced Ceramic X Corp. (ACXC) and IPD (integrated passive device) provided by Chip Implementation Center (CIC). We use flip-chip interconnects to combine active chips and passive part of power amplifiers.
We use a structure similar to traditional distributed amplifier and CRLH transmission lines are used in matching to improve the bandwidth of S21. One matching resistor in traditional distributed amplifier is removed to increase the PAE, however the removal will degrade the return loss. By using balanced amplifier structure with the broadband quadrature phase power splitter, we increase the circuit's bandwidth of S11 and S22. Overall, we improved the bandwidth of the power amplifier, PAE and linearity. At 3.1GHz~10.6GHz, the achievable power-added efficiency is up to 19~24.5%. The amplifier achieves the gain of 10.8±1dB, the output 1 dB compression of 14.6~16 dBm and the output third-order intercept point (OIP3) of 26.6~27 dBm, respectively.

並列關鍵字

power amplifier ； distributed amplifier ； UWB ； dual-feed distributed amplifier

參考文獻

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