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  • 學位論文

噴墨式互補型有機薄膜電晶體元件之開發

Development of Inkjet-Printed Complementary Organic Thin Film Transistor Device

指導教授 : 林致廷

摘要


由於穿戴式產品成為近年來市場的重要趨勢之一,使得許多研究團隊紛紛研究市面上電子產品以軟性基板製作的可能,例如:可饒式顯示器、電子紙、可饒式手機、有機太陽能電池以及有機RFID電路等,其中互補式有機薄膜電晶體為製作這些產品的基本元件。 近十年來N型以及P型有機半導體材料的開發已經逐漸成熟,而互補式有機薄膜電晶體的製程開發也從傳統製程轉向溶液製程,如何利用溶液製程的低成本、低溫製程的優勢開發出電性不輸於傳統製程的有機薄膜電晶體便成為一門重要的課題。 本論文在一般大氣環境下使用本研究團隊自行架設的噴墨系統進行製程,在源汲極材料為金的電極上噴印半導體材料P3HT和P(NDI2OD-T2)以製作互補式有機薄膜電晶體,並利用噴印PEDOT:PSS作為閘極電極以降低成本,做出來的互補式有機薄膜電晶體的增益可以達到-2.4。 未來我們將嘗試利用噴墨技術朝全噴墨有機積體電路發展,利用本論文研究所製作的互補式有機薄膜電晶體開發環形震盪器、邏輯閘等更高階的電路,並提升良率及改善轉換電壓值使其為VDD/2。

並列摘要


Wearable technology has become one of the most prevalent trends on the market. Many research teams have delved into the possibility of making electronic products on flexible substrates, such as flexible displays, electronic papers, flexible phones, organic solar cells and organic RFID circuits, etc. Among these applications, the complementary organic thin film transistors are the basic components used for the fabrication. In the past decade, the development of the N type and P type organic has grown mature. The fabrication of organic thin film complementary type has moved from traditional method to solution method. Finding a way to utilize the advantages of solution based fabrication such as low cost, low temperature while also maintaining the electrical properties of the traditional method has become a major topic of interest. In this paper our group has set up an inkjet printing system that is operating under atmospheric environment. The source electrode material as gold has been inkjet-printed semiconductor materials P3HT and P(NDI2OD-T2) for fabricating complementary thin film transistor. Furthermore, PEDOT:PSS has been inkjet-printed as the gate electrode to lower the cost. The Complementary OTFT could provide a gain of up to -2.4. In the future we will attempt to utilize the inkjet printing technology to develop an all inkjet printed organic integrated circuit. Using the Complementary OTFT covered in this research we can develop ring oscillators, logic gates and other advanced circuits. Improving the yield rate and the switching voltage value to be VDD/2 is also in our research plans.

參考文獻


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