- 學位論文
鎵/銦與鋁共存對水耕栽培水稻中鎵和銦累積之影響
Effects of Ga/In and Al coexistence on the accumulation of Ga and In in rice seedlings grown in solution cultures
摘要
由於鎵與銦近年來被廣泛使用於半導體產業，在環境水體及土壤中皆有濃度高於背景值，以及鎵與銦共同污染的情形發生，因此存在透過食物鏈進入人體造成健康危害的風險。鋁是廣泛分布於地殼中的元素，在酸性條件下有效性高，會影響植株生長及養分平衡，由於鎵、銦與鋁有部分的化學性質相似，且對植物造成的毒害症狀類似，加上鋁也會與土壤表面的鎵和銦競爭吸附位置，因此鋁、鎵與銦在土壤溶液中物種分布及植物吸收方面的交互作用值得被探討。本實驗目的為藉由水耕栽培的方式，了解水稻幼苗在鎵/銦與鋁共存下的交互作用對鎵和銦累積之影響。實驗之水耕液pH值調整為4.0，處理包含鋁與鎵共存、鋁與銦共存、鎵與銦共存以及鋁、鎵和銦個別的處理，選用水稻栽培種為台稉九號(Oryza sativa L. cv Taikeng 9)，植株於處理條件下生長暴露21天，後續分析植體中鋁、鎵、銦及植物營養元素的含量。結果顯示在鋁與鎵共存下，水稻幼苗生長抑制主要是來自鋁的毒害，鋁的存在會與鎵競爭，導致植體中鎵的總累積量減少，降低根部對鎵的吸收，並促使鎵由根部往地上部轉運；鋁與銦共存時的症狀和鎵與銦共存時相同，植株生長皆受到銦毒害影響為主，鋁或鎵的存在對於銦的吸收、轉移及累積皆不存在明顯的交互作用；銦則會抑制鎵的總累積量，限制植株根部鎵的吸收，並促使鎵由根部往地上部的傳輸。水耕液中鋁、鎵和銦對於檸檬酸的結合能力不同，當鎵/銦與鋁共存時對於溶液中檸檬酸的競爭是導致物種及有效性發生交互作用的主要因素，特別是鎵與檸檬酸的結合能力強，因此在鋁與鎵共存時具有明顯的競爭行為。本研究結果指出當鎵/銦與鋁共存時需特別考慮到其與有機酸之間的錯合能力，進而影響其對於植株的毒性及累積情形。
並列摘要
Gallium (Ga) and indium (In) compounds are widely used in semiconductor manufacturing industry. The discharge of Ga/In may result in the concentrations of Ga/In in groundwater and soil be higher than the background value and cause Ga/In co-contamination. Human beings might expose to Ga and In through the food chain and health hazards. Aluminum (Al) is the common metal element in the earth’s crust. In acid soils, dissolution of Al minerals leads to increase the concentration of soluble Al that are rhizotoxic to plant. Ga, In and Al have similar chemical properties and phytotoxic symptoms. Moreover, Al and Ga might compete for the adsorption sites on the soil colloid surfaces. Therefore, it’s important to investigate the interaction between Al, Ga and In. The objective of this study was to determine the effects of Ga/In and Al coexistence on the accumulation of Ga and In in rice seedlings grown in solution cultures. The treatments included Al/Ga coexistence, Al/In coexistence, and Ga/In coexistence. Rice seedlings (Oryza sativa L. cv Taikeng 9) were exposed to treatments for 21 days. After harvesting, the concentration of Al, Ga, In and nutrients element in the plant were analyzed by ICP-OES and ICP-MS. The results indicated that under Al/Ga coexistence, the growth inhibition of rice seedlings was mainly due to the Al toxicity. The presence of Al might inhibit the absorption of Ga, resulting in decreasing the accumulation of Ga in plant, and promoting the root-to-shoot translocation of Ga. The phenotype of rice seedlings in Al/In coexistence were similar to that of Ga/In coexistence, plant was affected by In phytotoxicity. The presence of Al or Ga had no significant effect on the absorption, translocation and accumulation of In. However, In inhibited the accumulation of Ga, decreased the absorption of Ga in the root, and promoted the translocation of Ga from root to shoot. The stability constants of Al, Ga and In binding to citrate were different. Ga preferred to complex with citrate, which cause the availability of Ga decreased in Al/Ga coexistence solution. According to the results of this study, it’s necessary to consider the stability constants of Al and Ga/In complex with organic acids, which might significantly affect the toxicity and accumulation of Ga/In in plants when Ga/In and Al coexistence.
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