有別於以往改善功率放大器的轉換效率而使用的相移技術,本論文中設計模擬與以65奈米互補式金氧半製程實作60GHz發射機,使用改良型相移技術來增加其轉換效率,並且在提升轉換效率的同時,又保有相當佳的線性度。 此晶片大小為1.02 與在直流供電1.2V下,294 mW的靜態直流功率消耗,並有16.7-dBm的最大輸出功率與16% 的轉換效率。在基頻的四種調變比較下,三個切換直流偏壓的模態在2.5-Gb/s 16-QAM(正交振幅調變)訊號的資料傳輸速度下可達到22.4 dB的誤差向量幅度,並且有12.1-dBm 的平均輸出功率與142 mW 的直流功率消耗,因此可達成11.4% 的平均轉換效率。
This thesis presents the analysis, design, and implementation of a 60-GHz outphasing transmitter with different modulations such as conventional outphasing, multilevel outphasing and asymmetric multilevel outphasing in 65-nm bulk CMOS. The transmitter is optimized for high output power and peak power-added efficiency (PAE) while maintaining sufficient linearity. The chip occupies an area of 1.02 and consumes 294 mW from a 1.2-V supply voltage, delivering 16.7-dBm linear output power with 16% PAE (PA). Comparison among four different modes demonstrate that it achieves a 2.5-Gb/s 16QAM three-level modulation with 12.1-dBm average output power, 142 mW DC consumption and 11.4% average efficiency (TX) at an EVM of 22.4 dB.