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  • 學位論文

鍺銻碲奈米相變化薄膜上之奈米記錄點研究

Formation of Nano Recording Marks on Crystalline Ge2Sb2Te5 Phase-change Nano Thin Film

指導教授 : 蔡定平
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摘要


本論文中,將使用讀取、寫入波長分別為633nm及658nm之紅光雷射泵探系統(靜態測試儀)研究不同膜層結構的結晶態相變化奈米薄膜上之記錄點形式,並討論在不同入射雷射功率及雷射脈衝時間條件下,在相變化薄膜上形成記錄點形式之變化。經由原子力顯微儀(Atomic Force Microscope)對記錄點進行掃探所得到的表面形貌資訊,可以充分且完整的了解相變化薄膜上記錄點形成的過程。從測量結果可以歸納出記錄點光學影像、反射率變化和表面形貌變化過程彼此間互相對應的關係。最後,本研究中的相變化薄膜之特殊光熱效果也可應用於未來的奈米光子學範疇中。

關鍵字

相變化 記錄點 光儲存

並列摘要


In this thesis, we study the formation of recording marks on crystalline Ge2Sb2Te5 phase-change nano thin film. We use an atomic force microscopy (AFM) and optical pump-probe system to investigate the topographic change and optical-thermal dependence of marks formation. From the experimental results, the process of recording mark formation is well studied in both incident power and pulse duration aspects. Through the complete experiments, the arbitrary pattern of recording marks can be written on phase-change material precisely by changing layered structure and tuning incident power and pulse duration. The special thermal-optical effect of phase-change material can be applied to the nano photonics in future.

參考文獻


[5]徐豪汶,“鍺銻碲相變化奈米薄膜之奈米尺度光熱性質的究”,碩士論文, 中央物理研究所 (2006)
[42]劉宏威,“相變化記錄層與奈米近場光學多層膜結構之光熱反應研究”,碩士論文,台灣大學物理學研究所 (2005)
[3]R. Zallen, “The Physics of Amorpous Solids”, John Wiley and Sons, New York (1983)
[4]T. Ohta, “Phase-Change Optical Memory Promotes the DVD Optical Disk”, J. Opt. Adv. Mat. 3, 609 (2001)
[6]G. F. Zhou, H. J. Borg, J. C. N. Rijpers, and M. Lankhorst, “Crystallization behavior of phase change materials: comparison between nucleation- and growth-dominated crystallization”, Optical Data Storage, 2000. Conference Digest, (2000)

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