貴金屬修飾石墨烯與矽蕭特基二極體氣體感測元件

Graphene/silicon Schottky diode gas sensors decorated with noble metal nanoparticles

傅傳岩(Chuen-Yen Fu)

指導教授 ： 陳永芳

國立臺灣大學/理學院/物理研究所/碩士(2014年)

https://doi.org/10.6342/NTU.2014.01700

摘要

在本篇論文中，我們利用石墨烯其特殊的導電性質與高表面積的二
維結構特性，應用於氣體感測之研究。我們將化學氣相沉積法成長的
石墨烯轉印在矽基板上製作蕭特基能障二極體，我們用熱離子激發理
論探討機制，石墨烯吸附氣體後改變費米能階，進而改變石墨烯與矽
接面的能障高度，造成電特性顯著的變化，因此我們可以藉由量測電
流值，得知目標氣體存在與否和濃度大小的資訊。為了提升氣體感測
器的靈敏度，在石墨烯表面以貴金屬修飾，例如：金、鉑，增強其對
目標氣體的吸附能力。實驗顯示此元件結構的可行性與感測氣體的高
靈敏度，並證實金屬修飾後的石墨烯可以增強其對氣體的交互作用。
此研究有助於未來石墨烯在氣體或生物感測元件上之應用。

關鍵字

石墨烯 ； 蕭特基二極體 ； 氣體感測器 ； 氫氣感測 ； 光電流

並列摘要

In this thesis, we utilize the special electrical properties and high surface of graphene for the gas sensing application. Graphene prepared by chemical vapor deposition(CVD) was transferred on the patterned silicon substrate in order to form Schottky barrier diode. The thermionic theory was implemented to discuss the gas sensing mechanism. It is found that the work function of graphene is changed when the molecules of target gas were adsorbed on graphene surface. This behavior changes the Schottky barrier height between the interface of graphene and silicon as well as the electric properties of the device. Accordingly, the magnitude of the current reveals the concentration of target gas. Furthermore, to enhance the adsorption ability of graphene, its surface is decorated by gold or platinum. It is found that the fabricated devices can serve as a highly sensitive gas sensor because the noble metals decorated on graphene surface can enhance the interaction between graphene and gas molecules. This research is therefore helpful for the application of graphene in biosensors and gas sensors.

並列關鍵字

graphene ； Schottky diode ； gas sensor ； hydrogen detection ； photocurrent

參考文獻

[57] X. M. Li, H. W. Zhu, K. L. Wang, A. Y. Cao, J. Q. Wei, C. Y. Li, Y. Jia, Z. Li, X. Li, D. H. Wu, Adv. Mater. 22(25), 2743 (2010).

[61] B. H. Chu, C. F. Lo, J. Nicolosi, C. Y. Chang, V. Chen, W. Strupinski, S. J. Pearton, F. Ren, Sens. Actuators B 157(2), 500 (2011).

[65] Y. H. Zhang, Y. B. Chen, K. G. Zhou, C. H. Liu, J. Zeng, H. L. Zhang, Y. Peng, Nanotechnology 20(18), 185504 (2009).

[3] J. Dong, D. Zhuang, Y. Huang, J. Fu, Sensors 9(10), 7771 (2009).

[35] K. I. Bolotin, K. J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, H. L. Stormer, Solid State Commun. 146, 351 (2008).