可轉換蕭特基二極體二氧化錫一維奈米線電阻式記憶體

本論文主要目的在研究單根二氧化錫奈米線電阻式記憶體的特性，元件的運作機制可以用可變換二極體效應來解釋，這個效應是由於外加電壓下，元件內部的帶電缺陷會在半導體與金屬電極接面處累積，造成蕭特基能障變化，形成蕭特基二極體方向的轉換。元件電阻的變化可以達到 1000 倍，也有良好的穩定性和狀態維持時間。此外，此原件在負偏壓下擁有非常小的電流，這樣的特性有助於防止高密度原件之間的漏電流。因為奈米線減少了元件的體積和消耗的能量，加上蕭特基二極體特有的性質，這個元件可以用在高密度電路的發展。

關鍵字

二氧化錫；奈米線；電阻式記憶體；蕭特基接觸；蕭特基位障；氧空缺

並列摘要

Resistive switching is observed in single SnO2 nanowire device with two back-to-back Schottky diodes. The underlying mechanism can be interpreted well by the switchable diode effect, which is caused by tunable Schottky barrier height due to the drift of charged defects induced by external electrical field. A resistance window of more than 3 orders of magnitude has been achieved. The device also shows an excellent performance of endurance and retention time. Additionally, a very small current under negative bias is observed, which can avoid the sneaking current induced in the nearby devices. Due to the greatly reduced device size, power consumption and inherent nature of Schottky diode, the work shows here should be useful for the development of high density circuitries.

並列關鍵字

SnO2 ； nanowire ； RRAM ； Schottky contact ； Schottky barrier ； oxygen vacancy

參考文獻

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國際替代計量

可轉換蕭特基二極體二氧化錫一維奈米線電阻式記憶體

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