應用於H-Band 之注入鎖定除頻器

H-Band Injection-Locked Frequency Dividers

李立源(Li-Yuan Lee)

指導教授 ： 劉深淵

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2012年)

https://doi.org/10.6342/NTU.2012.10658

摘要

隨著現代互補式金氧半場效電晶體製程技術的發展與進步，以往必需使用雙極性接面型電晶體來實現的高速電路將可以被互補式金氧半場效電晶體取代。如此驅使了許多毫米波段應用的發展，例如: 點對點的通訊，影像感測器，車用雷達系統，電波相關天文學。上述應用所使用的振盪器或者通道選擇器當中，鎖相迴路將會是一個關鍵的構成元件
為了實現非常高速的鎖相迴路，位於壓控振盪器後的第一級除頻器將是一個關鍵組件。它必須有很高的操作頻率，寬的鎖定範圍和低功率的消耗。然而在設計毫米波電路時，電感，導線和電晶體的寄生電容會減少電路的操作頻率。在追求高操作頻率，低功率消耗和低相位雜訊時，利用電感和電容為振盪器基礎的注入式鎖定除頻器提供了一個不錯的解決方案。為了實現高速的操作，我們在注入式鎖定除頻器中使用了分佈式電感、並且使電路振盪在第二極點。另外，在兩個電感之間加入互感效應，來加強除頻器的起振條件和增加其鎖定範圍。針對以上設計目的，將在考慮互感效應存在的前提下，對分佈式電感架構第二極點的頻率，以及起振條件進行分析。最後，分析互感效應對於鎖定範圍的影響。同樣的分析方法將被套用在五個不同架構的除頻器上。這五個除頻器使用40奈米的互補式金氧半場效電晶體製程，其中一個注入鎖定頻率最高可達298.7GHz，功率消耗為11.7mW，晶片面積為0.51x0.325mm2。

關鍵字

注入鎖定式除頻器 ； ILFD ； 毫米波 ； 互感電感 ； H頻段

並列摘要

With the development and progress of CMOS process, the high-speed circuits should be realized by BJT in the past are gradually replaced by CMOS. It inspires many millimeter-wave applications; such as point to point communications, image sensing, automotive radar systems, radio astronomy. In above applications, the phase-locked loop (PLL) is an important component to sever as a local oscillator or channel selector.
To realize a very-high-speed PLL, the frequency divider following the voltage-controlled oscillator will be a crucial building block. It must have high operation frequency, wide locking range, and low power consumption. In millimeter wave circuits design, the parasitic capacitances of passive inductors, wire lines and transistors will decrease the operation frequency of circuits. Injection-locked frequency dividers (ILFDs) with LC tank based oscillators can be a good solution for high operation frequency, low power consumption and low phase noise. To achieve high speed, the distributed-LC technique is used and the circuit oscillates at its second pole. In addition, coupled inductors are added to the distributed-LC network to enhance the oscillation condition and increase the locking range. According to above design issues, the operation frequency and oscillation condition of the distributed-LC ILFDs will be analyzed at the second pole with coupled inductors. The relationship of locking range and the coupling factor is also presented. Based on the analysis, five proposed H-band (220-325GHz) divide-by-2 ILFD are fabricated in 40nm CMOS process. One of the ILFDs has the highest injection-locked frequency of 298.7GHz, consumes 11.7mW from a 0.9V power supply; the chip area is 0.51 0.321mm2.

並列關鍵字

Frequency dividers ； ILFD ； milimeter-wave ； coupled inductors ； H-band

參考文獻

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