應用於生醫頻段使用注入式鎖定技巧之低功耗高效能無線發射機

Low-power High-efficiency Wireless Transmitters with Injection-locked Technique for Biomedical Applications

葉姿妤(Tzu-Yu Yeh)

指導教授 ： 林宗賢

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2015年)

https://doi.org/10.6342/NTU.2015.10802

摘要

近年來，具相位多工器之注入式鎖定發射機廣泛的被應用於低功耗需求之系統中。然而，傳統注入式鎖定技巧會在發射機輸出端造成突波，易干擾鄰近通道之傳輸品質；另外，傳統具相位多工器之注入式鎖定發射機並不適合採用高階相位調變，因系統需同時產生多相位之高頻載波訊號供相位多工器使用，故將不利於低功耗應用。
　　本論文實現了兩個應用於生醫頻段，操作在四億赫茲，使用注入式鎖定技巧之低功耗高效能無線發射機。第一個作品採用BPSK/DBPSK調變，提出突波抑制技巧來降低傳統注入式鎖定技巧在發射機輸出端造成的突波。第二個作品提出一適用於高階相位調變之全新注入式鎖定發射機架構，透過注入相位多工器，我們能藉由選擇不同相位之低頻注入訊號來決定高頻輸出載波之相位資訊，完成相位調變。相較於傳統具相位多工器之注入式鎖定發射機需同時產生多相位之高頻載波訊號，所提出的架構僅需使用一單端環形振盪器即能實現具相位調變之載波訊號，故能進一步降低系統功耗。
　　所提出之作品均使用台積電0.18微米製程。第一個作品之系統功耗為390微瓦，在20 Mbps資料傳輸率下之誤差向量幅度為13.68 %。所提出之注入突波抑制技巧具有11.7 dB之突波壓制效果。第二個作品之系統功耗為345微瓦，相較於前一作品能節省11 %之系統功耗。在使用BPSK調變、10 Mbps資料傳輸率下之誤差向量幅度為13.6 %，使用QPSK調變、1 Mbps資料傳輸率下之誤差向量幅度為20 %。

關鍵字

注入式鎖定 ； 發射機 ； 低功耗

並列摘要

In recent years, injection-locking technique and phase-MUX technique is widely adopted in low-power transmitter design. However, the spurious tones at the output of transmitter induced by injection signal may disturb the transmission quality of adjacent channels. In addition, phase-MUX technique is not suitable for injection-locked transmitters with high-order phase modulation, and it is also not preferred for low-power application because of the requirement for generating multi-phase high-frequency carriers at the same time.
　　In this thesis, two low-power energy-efficient 400-MHz injection-locked transmitters are proposed to deal with the above mentioned issues. The first work presents injection-spur-suppression technique to decrease the level of injection spur. The second work introduces a novel injection-locked transmitter architecture for BPSK/QPSK modulation. With the proposed injection-phase-MUX technique, phase modulation can be accomplished by changing the phase of injection signal. In this way, only single-end ring oscillator can generate output signal with different phases according to the phase of injection signal, so the power consumption can be further reduced.
　　The first work is fabricated in TSMC 0.18 μm CMOS technology. The total power consumption is 390 μW, and the EVM is 13.68 % at 20-Mbps data rate. The proposed injection-spur-suppression technique can decrease the spurious tones by more than 11.7 dB. The second work is fabricated in TSMC 0.18 μm CMOS technology. The total power consumption is 345 μW, which reduces 11 % of system power. BPSK EVM is 13.6 % at 10-Mbps data rate, and QPSK EVM is 20% at 1-Mbps data rate.

並列關鍵字

Injection-locked ； Transmitter ； Low Power

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