奈米線電晶體

Nanowire Transistors

喬斯

指導教授 ： 何志浩

國立臺灣大學/電機資訊學院/電機工程學研究所/碩士(2010年)

https://doi.org/10.6342/NTU.2010.02075

摘要

無資料

關鍵字

電晶體

並列摘要

The electrical and optical properties of the ZnO nanowires (NWs) have been investigated through back gate field effect transistors (FET) fabricated by photolithographic process and e-beam lithography. The electrical behavior has been characterized by the output and transfer characteristics, and the results show good electron mobility (~100 cm2v-1s-1), relative low concentration (~ 1016 cm-3), high Ion/Ioff ratio (~105), large subthreshold swing slope (0.5 V/dec). Enhanced performance has been observed after rapid thermal annealing at 300 C for 3 minutes and under vacuum conditions, ascribed to the improvement of the surface states caused by the oxygen absorbed species in the surface of the NW. Under white light illumination a maximum sensitivity (Iphoto/Idark) of ~106 is measured below the subthreshold swing region. By other side the oxygen absorbed species effect combined with the photogenerated electron-holes upon ultraviolet (UV) illumination has been used to fabricate UV photodetectors and optoelectronic switches. For first time ZnO NWs have been functionalized with NiO nanoparticles using Ni thermally evaporated and oxidized with oxygen flow at 600 C for 30 minutes, as the SEM and XRD results corroborate. Finally the resistive random-access memory (RRAM) effect has been demonstrates with ZnO NWs using the conductive filament model and the concept of back gate effect has been applied successfully to the RRAM in order to create a high resistance state.

並列關鍵字

Zinc Oxide Nanowire (ZnO NW) ； Field effect Transistor (FET) ； Ultraviolet (UV) photodetector ； Nickel Oxide Nanoparticle (NiO NP) ； Resistive Random-Access Memory (RRAM)

參考文獻

45 G. D. Yuan, W. J. Zhang, J. S. Jie, X. Fan, J. A. Zapien, Y. H. Leung, L. B. Luo, P. F. Wang, C. S. Lee, and S. T. Lee. p-Type ZnO Nanowire Arrays. Nano Lett., Vol. 8, No. 8, 2008.

1 Fernando Patolsky, Gengfeng Zheng & Charles M Lieber Fernando Patolsky, Gengfeng Zheng & Charles M Lieber. Fabrication of silicon nanowire devices for ultrasensitive, label-free, real-time detection of biological and chemical species. Nature Protocols 1, - 1711 - 1724 (2006).

2 Michael S. Arnold, Phaedon Avouris, Zheng Wei Pan, and Zhong L. Wang. Field-Effect Transistors Based on Single Semiconducting Oxide Nanobelts. J. Phys. Chem. B, 2003, 107, 659-663.

3 Zhi-Min Liao, Zhen-Kai Liu, Yang-Bo Zhou, JunXu, Jing-Min Zhang and Da-Peng Yu. The effect of adsorbates on the space–charge-limited current in single ZnO nanowires. Nanotechnology 19 (2008) 335204 (4pp).

4 Zhi-Min Liao, Kai-Jian Liu, Jing-Min Zhang, Jun Xu, Da-Peng Yu. Effect of surface states on electron transport in individual ZnO nanowires. Physics Letters A 367 (2007) 207–210.