高介電氧化層堆疊二氧化矽感測膜的多通道矽奈米線生物感測器用於心肌鈣蛋白檢測

Silicon-based multi-nanowire biosensor with high-k stacked oxide sensing membrane for cardiac troponin I detection

沈仕翔(Shih-Hsiang Shen)

指導教授 ： 林致廷

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2014年)

https://doi.org/10.6342/NTU.2014.10776

摘要

近年來，心血管疾病造成一直是世界死亡人口中高居首位的死因。其中一種嚴重的心血管疾病為心肌梗塞，而心肌梗塞在發病後，病人血液中的心肌鈣蛋白(cTnI)濃度會急遽提升，因此本研究透過矽奈米線生物感測器測量心肌鈣蛋白來達到診斷心肌梗塞的目的。
本論文利用半導體製程製做多通道矽奈米線電晶體，並在矽奈米線上沉積不同條件的介電氧化層材料，用來檢測心肌鈣蛋白(cTnI)。而本文中沉積的介電氧化層材料是14奈米和28奈米的二氧化矽(SiO2)、14奈米與7奈米的氧化鋁（Al2O3）及10奈米的二氧化鉿（HfO2）。根據14奈米和28奈米的二氧化矽的實驗結果，發現高電容可以提升元件的感測能力。另外，因為二氧化矽對3 - 氨基丙基矽烷（APTES）有更好的相容性，本研究使用高介電係數氧化層堆疊極薄的二氧化矽結構。在氧化鋁與二氧化鉿等高介電係數氧化層實驗中，這種結構提高了高介電系數氧化層元件的感測能力，14奈米氧化鋁元件提升約3.8倍感測靈敏度與0.59伏的最低濃度臨界電壓變化而10奈米二氧化鉿元件提升約1.4倍的感測靈敏度與0.71伏的最低濃度臨界電壓變化。此外，本論文也將二氧化鉿堆疊極薄的二氧化矽元件實際應用於測試病人血清，驗證可以透過多通道奈米線生物感測器與堆疊結構實際檢測心肌鈣蛋白。依照這些實驗結果，本論文提出的矽奈米線生物感測器結構被實驗證實在未來心肌鈣蛋白檢測應用中具有相當大的潛力。

關鍵字

生物分子感測器 ； 奈米線 ； 感測膜 ； 高介電係數材料

並列摘要

In recent years, cardiovascular diseases (CVDs) always are the top ten causes of death in the world. One of severer CVDs is acute myocardial infarction (AMI). To diagnose AMI, cardiac troponin I (cTnI) is typically used as an important biomarker, because its concentration rapidly rises right after AMI occurring. In this work, we successfully fabricate multi-channel Si-NW transistor by semiconductor process. We demonstrate Si-NW biosensors coated with different dielectric materials to detect cTnI. These dielectric materials are 14nm / 28nm SiO2, 7nm/14nm aluminum oxide (Al2O3) and 10nm hafnium oxide (HfO2). Based on the experimental results of 14nm SiO2 and 28nm SiO2, it is found that high capacitance dielectrics contribute better sensing performance than that of low capacitance dielectrics. In addition, high-k material dielectrics stacked with ultrathin SiO2 sensing membrane structures are used for Al2O3 and HfO2 because SiO2 has better compatibility with 3-Aminopropyltriethoxysilane (APTES). In these experiments of high-k dielectrics, it shows that the stacked structure improves sensing performance including sensitivity and threshold voltage shifting to first concentration (320fM). Sensitivity of 14nm Al2O3 dielectric devices and 10nm HfO¬2 dielectric devices are 3.8 and 1.4 times improved respectively by using stacked structure; Threshold voltage shifting to 320fM cTnI is 0.59 and 0.71 increased for 14nm Al2O3 and 10nm HfO¬2 dielectric devices. Furthermore, we also test AMI patient serum using this structure. Therefore, the detection capability of cTnI can be improved by proposed stacking structure of multi-nanowire biosensors. Based on this work, the proposed Si-NW biosensor structure is experimentally demonstrates a good potential for future applications in cTnI detections.

並列關鍵字

nanowire biosensor ； sensing membrane ； high-k material

參考文獻

參考文獻

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