利用射頻濺鍍法自然成長鉍的奈米線及奈米顆粒

Bismuth Nanowire and Nanoparticle Grown Naturally Using an RF Sputtering System

吳炳琨(Bing-Kun Wu)

指導教授 ： 陳銘堯

國立臺灣大學/理學院/物理研究所/博士(2013年)

https://doi.org/10.6342/NTU.2013.02388

摘要

在此論文中，我們利用射頻濺鍍法在康寧玻璃基板上自然成長鉍奈米線及奈米顆粒，在不同溫度和濺鍍槍功率找出奈米線及奈米顆粒的成長機制。利用掃描式電子顯微鏡及穿透式電子顯微鏡照片觀察奈米線及奈米顆粒的成長，發現溫度在120 ~ 160 ˚C及濺鍍槍功率在 0.5 W/cm2時，可自然成長出粗細一致的鉍奈米線。溫度在200 ˚C以上及濺鍍槍功率在 0.12 W/cm2時，可自然成長出單層鉍的奈米顆粒，利用成長時間不同，生長出不同顆粒大小的鉍奈米顆粒，進而量測鉍奈米顆粒的性質。

關鍵字

鉍 ； 奈米線 ； 奈米顆粒 ； 射頻濺鍍 ； 掃描式電子顯微鏡

並列摘要

Abstract
We report the growth of Bismuth (Bi) nanowires and nanoparticles on glass substrates using a radio frequency (RF) sputtering system. The growth temperature and RF power were varied to study the growth mechanism of the nanowires or nanoparticles. The scanning electron microscope (SEM) / transmission electron microscope (TEM) images of the samples under various growth conditions were taken to reveal the morphologies of the Bi nanowires and films. We found that the optimal conditions for growing Bi nanowires were 120 ~ 160 ˚C, 0.5 W/cm2 (growth rate 40 Å/s at RT), and 240 s. The optimal conditions for growing Bi nanoparticles were above 200 ˚C, 0.12 W/cm2 (growth rate 6 Å/s at RT). A Tauc plot was used to determine the optical gap of different size nanoparticles.

並列關鍵字

Bismuth ； nanowire ； nanoparticle ； RF sputter ； SEM

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