鍺錫合金光電元件之性質研究

紅外光偵測器被廣泛應用在工業檢測、夜視、軍事、生醫等用途，隨著近年來物聯網的發展，紅外光偵測器也是智慧型家庭等物聯網系統中重要的監視器元件。其中2-3微米波長的光，較易穿透空氣中的水氣，因此在惡劣的天候下也能遠距離進行目標偵測。在四族中的鍺本身具有許多優良特性，如較高的電子遷移率以及在直接能隙與間接能隙之間具有較低的能量差使其成為另一個研究焦點。本研究中，在鍺中摻入適量的錫而形成鍺錫合金，理論上能縮小鍺的直接能隙與間接能隙之間的差距，當超過一定量後將轉成直接能隙之材料。目前運用於焦平面陣列(FPA)之材料有相當多種，如:CdZnTe,HgCdTe(MCT)……等複合材料。在近紅外光波段主要以InGaAs為主要之主動層材料，藉由鍺中摻入錫之技術將有機會涵蓋InGaAs之吸收波段(0.9~1.7um)。本實驗中，我們運用分子束磊晶技術成長鍺錫合金PIN結構之樣品，製作成光偵測器。再以鍺錫合金製作之光偵測器，量測其變溫下之光偵測特性變化。並由實驗結果探討變溫下對於鍺錫合金之光響應度的物理特性。以此為基礎，我們最終想製作鍺錫合金的焦平面陣列運用於近紅外光。

關鍵字

鍺錫合金；直接能隙；光偵測器；光響應度

並列摘要

Infrared light detectors are widely used in industrial inspection, night vision, military, biomedical and other purposes. Recently, with the development of Internet of Things, infrared light detectors which are a part of monitor systems are also important for smart home. In 2-3 micro meter wavelength of light which easily penetrates water vapor in the air can be detected by the infrared photodetector at the long distance in the bad weather. Germanium (Ge) has lots of benefits in group IV materials. For example, germanium has higher electron mobility and smaller energy difference between the direct and the indirect energy bandgaps. Currently, materials used in focal plane array (FPA) have lots of kinds, such as: CdZnTe, HgCdTe (MCT), etc. In the near infrared wavelength, InGaAs is a main material as an active layer. It is difficult to cover all infrared region. We can use germanium-tin (GeSn) FPA to cover all infrared wavelength. In this study, we add tin into Ge to form GeSn grown by molecular beam epitaxy (MBE) and fabricate PIN photodetectors. We investigate the temperature dependence of responsivity for Ge0.975Sn0.025 photodetector and research for its characteristics. On this basis, we eventually want to make GeSn FPA used in the near-infrared region .

並列關鍵字

germanium tin alloys ； direct energy gap ； photodetectors ； responsivity

參考文獻

[21] T. Brudevoll, D. S. Citrin, M. Cardona, and N. E. Christensen,

[2] H. Iwai, "Roadmap for 22 nm and beyond," Microelectronic Engineering, vol. 86,

"High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach

"Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular

"1.55 mu m direct bandgap electroluminescence from strained n-Ge quantum

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鍺錫合金光電元件之性質研究

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