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  • 學位論文

電漿處理及抗反射結構對非晶矽/單晶矽異質接面太陽能電池特性影響之研究

The effect of plasma treatment and anti-reflection structure on the performance of a-Si:H/c-Si Heterojunction Solar Cells

指導教授 : 李嗣涔

摘要


在非晶矽/單晶矽異質接面的太陽能電池中,元件特性與異質接面的品質和抗反射結構是強烈相關的。第一部分,本論文使用一種介面處理方法來改善介面的品質。在本論文該方法稱之為電漿處理,是使用電漿增強化學氣相沉積方法在實際成長非晶矽薄膜之前,先以非晶矽薄膜成長參數之低能量混合態電漿對單晶矽表面作預處理。由於介面的良好鈍化和內建電位的增加,使用電漿處理方法可以有效提升元件之開路電壓和填充因子,進而增加太陽能電池的轉換效率。第二部分,本論文使用抗反射結構來改善元件特性。利用有效的抗反射結構,元件之光電流可以有顯著的提升,進而提升轉換效率。本論文採用倆種方法來達成抗反射結構。其一是使用化學濕蝕刻方法製造的微結構基板,此方法可顯著減少基板的反射率。另一個方法是改善氧化銦錫透明導電層的品質。藉由提升氧化銦錫的成長溫度,透明導電層的穿透度跟導電性可以被有效提升。

並列摘要


In a-Si:H/c-Si heterojunction solar cells, device performance is strongly dependent on the quality of the heterojunction interface and anti-reflection structure. The first part, we apply a method to treat the heterojunction interface and improve its quality in this thesis. The method we call plasma treatment is to pre-treated the c-Si surface by a low energy mixed plasma which is the growth recipe of a-Si:H layer before the this film is actually deposited by PECVD. The plasma treatment improve both the open circuit voltage(Voc) and fill factor(F.F.) and thereby increase the conversion efficiency of solar cell due to the good passivation of interface and the increase of build-in potential. The second part, anti-reflection structure is introduced to improve the device performance in this thesis. By means of anti-reflection structure, the short circuit current density (Jsc) can be largely enhanced and the efficiency is improved. In this thesis, we adopt two ways to achieve anti-reflection structure. One is to use textured substrate formed by wet chemical etching method. This way can significantly reduce the reflectance of substrate. The other is to improve the quality of ITO. Due to increasing the deposition temperature of indium tin oxide (ITO), the transmittance and conductivity of ITO can be improved.

參考文獻


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