低壓化學氣相沉積之模式建造與製程改善

本研究以DRAM製程中薄膜沉積中的低壓化學氣相沉積（LPCVD）反應器為目標，欲建立一直立式批次LPCVD反應器的物理模式，以完整的描述出LPCVD反應器中薄膜沉積的狀況。在不同的操作狀況下提供不同的操作溫度，以降低製程所產生的失敗率，提高製程的良率。　　本文所使用的反應動力式，是以文獻為基礎再用實驗值進行回歸，進行修正所求得，並探討了兩種不同的TEOS進料流量：380sccm和230sccm，在這兩種不同操作條件下進行模擬，並且分別操作在兩種不同的晶圓片數的情況下：100片與125片，以所得的模擬結果比對實驗值，驗證物理模式是否可以適用。並在以上四種不同的操作條件下，提出在該條件下適當的反應溫度。　　由本文提出的物理模式除了可以應用在單一機台上，為了證明在不同的機台上也可以使用，因此我們也利用了不同機台的實際數據來進行比對，並由模擬結果來證明我們的物理模式可以應用在不同機台上。最後由模擬結果可以得知，本文所提出的物理模式可應用於不同的反應晶圓片數、不同的反應物進料流量和不同的操作機台上。

關鍵字

低壓化學氣相沉積；薄膜沉積；四乙氧基矽烷

並列摘要

This work presents a physical model to simulate the film deposition in a batch LPCVD (Low Pressure Chemical Vapor Deposition) reactor for DRAM processing. The objective is to use this model to set proper reacting temperatures for lower defective rate and the higher yield of the process. The reaction kinetics model is based on the literature result, and the parameters are modify by regression to fit experimental data. Two TEOS feed flow rates are considered: 380 sccm and 230 sccm. The process is simulated with different quantity of wafers, 100 pieces and 125 pieces. The simulation results are compared with the experimental date and we find that this model works well. Based on this model, suitable reacting temperature aimed to uniform deposition of films can be predicted individually under the operating conditions aforementioned. In proof of the applicability of this model, the simulation result is also applied to real operating data from different machine platform. The results show that this proposed model is suitable for simulating the film deposition in LPCVD reactor under various TEOS feed flow rate, wafer production rate and machine platform.

並列關鍵字

LPCVD ； CVD ； TEOS,deposition

參考文獻

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[5] Azzaro, C.; Duverneuil, P.; Couderc, J.P., “Thermal and kinetic modeling of low-pressure chemical vapor deposition hot-wall tubular reactors” Chemical Engineering Science., 47(15-16), 3827 (1992).

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國際替代計量

低壓化學氣相沉積之模式建造與製程改善

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