奈米直印金屬技術與低介電係數材料在半導體製程 與光電元件應用之研究

The study of metal nanoimprint and low-K materials for photoelectric device and semiconductor manufacturing technology applications

郭珊珊(Shan-Shan Kuo)

指導教授 ： 陳學禮

國立臺灣大學/工學院/材料科學與工程學研究所/碩士(2007年)

https://doi.org/10.6342/NTU.2007.03072

摘要

在本篇論文中主要分為兩大主題，第一大主題是利用金屬奈米壓印與轉印技術，製作各種週期性結構的金屬膜，探討其表面電漿引發的高穿透性質，並應用於發光元件的光取出效率的增強上；第二大主題則是利用不同的製程參數調變六甲基矽氧烷（HMDSO）的介電與光學特性，製作出同時可以作為抗反射層，又可以作為低介電係數絕緣層的材料。
近年來有許多探討表面電漿的研究，因為週期性結構引發的表面電漿，會導致金屬膜有異常高的穿透率，而此現象可廣泛的運用在光電元件上。在本論文中，利用改良後的金屬奈米壓印技術，能夠以低壓、低溫壓印出傳統製程難以製作的結構連續金屬膜，並輕鬆調變了傳統製程難以調變的結構深度，發現其穿透率竟可以有十倍的增強。我們更利用FDTD方法模擬進一步探討連續金屬膜的異常穿透機制。並以奈米轉印原理為基礎，我們發展出金屬膜轉印技術，搭配壓印技術，我們有能力製作各種不同結構金屬膜，甚至可以探討連續金屬膜與孔洞陣列金屬膜的光學現象差異，發現連續金屬膜在有折射率匹配層狀況下，可以有強於孔洞陣列金屬膜的穿透率。最後我們將壓印的研究成果應用至有機發光元件，並成功的增強其放光效率。
隨著奈米科技的發達，積體電路製程尺寸也越來越小，然而隨之而越來越嚴重的RC時間延滯，限制了元件的工作效率，因此低介電係數材料的研發也就越漸重要。本篇論文利用改變不同的製程條件，可以調變六甲基矽氧烷的介電常數與光學特性，而藉著摻雜氟在六甲基矽氧烷中，成功的使介電係數降至2.0以下，搭配光學薄膜理論，我們更發現了其可使各種高反射底材在ArF（193 nm）波段反射率降至1％以下的優良抗反射層的特性，因此我們成功的製作出可以同時作為光學微影抗反射層與低介電係數的先進材料。

關鍵字

壓印 ； 轉印 ； 有機電致發光二極體 ； 表面電漿 ； 低介電

並列摘要

There are two main topics in this thesis. First, we investigate the optical properties of metal films patterned by metal nanoimprint and reversal imprint technologies. Further, the research is applied for the enhancement of light extraction efficiency from organic light emitting diodes. Second, we prepare HMDSO to be a low dielectric and an antireflection layer in ArF optical lithography.
Recently, surface plasma of metal film with periodic structures was found to have extraordinary transmittance phenomenon, and has evoked great attention for the various applications. In this study, metal film with wavy structures is patterned by advanced metal nanoimprint technology. Various shape and depth of metal films are difficult to fabricate by conventional lithography processes. In this thesis, we successfully tune the depth and shape of patterned metal films with different pressure and mold, and find that the transmittance can be dramatically enhanced from 5% to 50%. Furthermore the optical mechanism is investigated by the finite-difference time domain (FDTD) method. Base on reversal imprint technology, we develop a novel metal reversal imprint technology for patterning deep metal film structure with various shapes in low temperature and pressure. The continuous metal film was found to have higher transmittance than non-continuous metal films with hole-array structures. In this study, we also successfully enhance the light extraction efficiency of OLED devices by nano-imprint metal technology.
With the progress of nano-technology, the requirement of next generation integrated circuits (IC) is definitely higher package density and speed. However, the resistance-capacitance (RC) time delay in high performance devices has become a serious problem. Therefore, it is more important to find novel low dielectric constant (low-K) materials for metal interconnection processes. In this study, we adjust the optical and dielectric properties of HMDSO with different process parameters, such as the flow ratio of O2, CHF3 and HMDSO with different plasma conditions. By increasing the participation of fluorine, the dielectric constant could be successfully reduced to less than 2.0. By optical thin film theoy, we find optimized low-K HMDSO films can also reduce the reflectance of various highly reflective to less than 1% for the reduction of the standing wave effect in ArF lithography.

並列關鍵字

nanoimprint ； reversal imprint ； OLED ； surface plamsa ； low dielectric ； HMDSO

參考文獻

42. 趙健皓，次波長金屬微結構之表面電漿特性與應用之研究，國立台灣大學碩士論文，(2004)

20. 王鉦元，中空金奈米粒子及奈米壓印金屬在表面電漿元件上之應用,國立台灣大學碩士論文,(2006).

7. 黃楷庭，次波長微結構在表面電漿元件及太陽能電池應用之研究，國立台灣大學碩士論文，(2006)

31. 鄭建星，濺鍍銅薄膜與低介電常數材料的熱反應性研究，國立成功大學博士論文，(2003).

17. Hisao Nigai, Masaru Hori ,Toshiaki GoTo, Toshiaki Fujii and Mineo Hiramatsu, Jpn. J. Appl. Phys. 42, 2775, (2003)