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  • 學位論文

一、雙極性光電材料之合成及應用 二、熱聚型電洞傳輸材料之合成及應用

1. Synthesis and Application of Bipolar Opto-electronic Materials 2. Synthesis and Application of Thermal Cross-linkable Hole-transporting Materials

指導教授 : 汪根欉

摘要


中文摘要 一、雙極性光電材料之合成及應用: 近年來,由於材料之設計與合成的進步,發現了許多雙極性的材料,其中有些甚至具有雙載子傳輸性質。因此,我們設計與合成一系列雙極性的分子,在分子結構上作細微的調整與修正,使其HOMO或LUMO能階能與陰陽極之功函數相仿,即可簡化OLED元件結構而不影響元件之放光效率。 在本論文中,我們設計與合成了新型具電子傳輸性質的主體材料(NpBI, DBTBI),以予體-受體分子組合而成的雙極性主體材料(CbzCBI, CbzNBI, mCPCBI, mCPNBI, TICCBI, TICNBI)。這些新型材料皆具有良好的熱穩定性質及夠大的三重態能量。其中,DBTBI與DTAF搭配在雙放光層PHOLED綠光元件中有16.5 %的EQE及45.8 lm/W的功率效率,這是目前僅使用兩種傳輸材料製成的元件中效率最高的例子。CbzCBI與mCPCBI在三層PHOLED綠光元件中搭配多種磷光染料,皆有不錯的效率表現(20.7 % EQE, 67 lm/W)。而CbzNBI 與mCPNBI用於藍光PHOLED元件中也能有17.4 %的EQE及29.8 lm/W的效率表現。 二、熱聚型電洞傳輸材料之合成及應用: 溶液製程對PLED元件的製備相當重要,然而,溶液製程遇到最大的麻煩是,當要在已塗佈好的第一層材料上製備第二層薄膜時,其溶劑的使用必須不能破壞已製備好的第一層材料。因此,藉由引入具有熱聚性質的基團(如:trifluorovinyl ether (TFVE)或styrene基團)至我們設計的電洞傳輸材料,再將材料塗佈於基板後,藉由光或熱的作用產生交聯 (crosslink) 的薄膜,交聯後的薄膜將不會被任何溶劑所破壞。 我們將TFVE及styrene基團分別引入至含fluorene之電洞傳輸材料中,設計與合成出TFVE1-3、TICVB、TICOC6VB。其中我們將TFVE系列分子以溶劑製程作為電洞傳輸層並與alpha-NPD為電洞傳輸層之熱蒸鍍元件做比較,發現其效率並無太大改變,但溶劑製程卻可以省卻製程上的設備成本。

並列摘要


1. Synthesis and Application of Bipolar Opto-electronic Materials We have developed two novel electron-transporting type host materials (NpBI, DBTBI), carbazole/benzimidazole hybrid bipolar host materials (CbzCBI, CbzNBI, mCPCBI, mCPNBI) and indolocarbazole/benzimidazole hybrid bipolar host materials (TICCBI, TICNBI). All these materials have good thermal stabilities and high triplet energy level. Among these materials, DBTBI is a good host for a double-emitting layer green PHOLED which has high EQE (16.5%) and power efficiency (45.8 lm/W). CbzCBI and mCPCBI are good hosts for typical three-layer green PHOLED (20.7 % EQE, 67 lm/W). Otherwise, the blue PHOLED devices exhibit high EQE (16.3%) and power efficiency (29.8 lm/W) when using CbzNBI and mCPNBI as the host materials. 2. Synthesis and Application of Thermal Cross-linkable Hole-transporting Materials We have demonstrated the significant advantages of using the hole-transporting material, TFVE molecules to improve the preparation of the PLEDs. We have also measured the hole mobility of the cross-linked materials. One must be noticed is that the performance of the thermal cross-linked devices are comparable with the vacuum-deposited alpha-NPD device. The new crosslinkable HTM TICOC6VB that incorporate the indolocarbazole core has been synthesized. The thermal-crosslinked TICOC6VB/HILVB is a good candidate for hole-transporting layer.

並列關鍵字

OLED bipolar Opto-electronic materials

參考文獻


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被引用紀錄


丁浩淳(2010)。純碳氫及雙極性磷光OLED主體材料之合成、性質與應用〔碩士論文,國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342%2fNTU.2010.10679

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