合成一維非晶氧化鋅奈米線結構及其多波段光源檢測應用

Intensify the application of ZnO-based nanodevices: Gigantic enhance the photo-detection ability of nanosensor by using amorphous ZnO nanowires

賴俊言(Chun-Yen Lai)

指導教授 ： 葉炳宏

淡江大學/理學院/物理學系碩士班/碩士(2015年)

https://doi.org/10.6846/TKU.2015.00875

摘要

本研究利用單晶氧化鋅奈米線在特定濕度環境中所產生的自發性再成長現象製備非晶氧化鋅奈米線。利用電子顯微鏡如SEM、TEM、AFM等對自發性再成長效應進行分析與驗證，研究中發現利用非晶氧化鋅奈米線可以大幅提升紫外光感測能力提高反應、回復時間至20毫秒(單晶氧化鋅光感測元件反應及回復時間約為8.6、53秒)，更可以利用此元件進行多波段光檢測(365nm、520nm、590nm、840nm、940nm)。本實驗不僅提供了非晶氧化鋅奈米線自發性再成長機制與方法，更進行了多波段光檢測實驗及感測能力。

關鍵字

單晶氧化鋅奈米線 ； 自發性再成長 ； 奈米線 ； 氧空缺 ； 濕氣反應 ； 非晶氧化鋅奈米線

並列摘要

In this work, we have demonstrated amorphous ZnO nanowires (a-ZnO NWs) could be spontaneous grown from crystalline ZnO (c-ZnO) NWs at specific humid environment. The spontaneous reaction mechanism and result can be analyzed by humidity controlling and OM/SEM/TEM system. The a-ZnO NW can be used as a powerful material to enhance the detection ability of photo-sensor; for UV light detection, the response and the reset time can be improved to 20 ms (8.6 s and 53 s, c-ZnO NW photo-detector), the sensitivity also can be enhanced to 600% (9%, c-ZnO NW photo-detector). Furthermore, the broadband light can be detected by using a-ZnO NWs sensor, such as 365nm, 520nm, 590nm, 840nm and 940nm wavelengths light. This work provides the spontaneous growth mechanism and methods of the a-ZnO NWs; the gigantic enhancement of photo-detection ability and broadband light detection can be achieved by using a-ZnO NWs. This a-ZnO NWs fabrication and photo-detection investigation can intensify ZnO-based nanodevices application.

並列關鍵字

C-ZnO ； Spontaneous reaction ； nanowire ； oxygen vacancy ； Humidity reaction ； a-ZnO

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