透過您的圖書館登入
IP:3.234.177.119
  • 學位論文

利用PECVD製備高c軸氧化鋅薄膜及其在UV檢測器之應用

Fabrication of highly c-axis oriented ZnO thin films for UV photodetector applications by PECVD

指導教授 : 魏大華

摘要


本論文分為兩大部份,第一部份是利用電漿輔助化學氣相沉積系統沉積具高c軸優選取向之氧化鋅薄膜於p-Si(100)基板上,其中改變不同製程參數沉積薄膜。研究結果顯示二氧化碳比例對氧化鋅薄膜的影響顯著,在射頻電源供應器之功率為70 W、二氧化碳(氧來源)與前驅物二乙基鋅(鋅來源)之比例為3:1、工作壓力 6 Torr、沉積時間5分鐘、沉積溫度400 oC,可以成功製備出具高c軸優選取向之氧化鋅薄膜。第二部份是以氧化鋅薄膜研製金屬-半導體-金屬結構之元件歐姆接觸,先行物理氣相沉積系統鍍上約100 nm的白金電極,接著利用微影蝕刻及舉離法製作指叉狀電極,為了讓電極與材料之間有較高靈敏性及低功率損耗,故利用快速熱退火其製程壓力為5 Torr,退火環境為氬氣、氮氣以及真空環境,退火溫度由150 oC到550 oC、持溫時間為5分鐘至20分鐘,尋找最佳歐姆接觸。研究結果顯示在氬氣環境下退火450 oC持溫10分鐘時可以成功製備歐姆接觸作為電流傳導界面。元件接續做電性檢測,其暗電流值為5 mA而光電流值為30 mA具有明顯之增益值,結果顯示元件對紫外光的響應是以指數函數成長,並且在6.26秒內上升的幅度超過80%,當移除紫外光時,元件立即轉換成關閉狀態,本研究成功製備高c軸氧化鋅薄膜及在紫外光檢測器之應用。

並列摘要


The goal of this study are two folds. First, high c-axis ZnO thin films were deposited onto p-Si (100) substrates using Plasma Enhanced Chemical Vapour Deposition system. It was found that the CO2 concentration have significant effects on the quality of the ZnO thin films. Also, high c-axis ZnO film with outstanding properties was successfully prepared under 70 W of radio frequency power, CO2:DEZn = 3:1, 6 Torr of working pressure, 5 minutes of deposition time, and 400 oC of deposition temperature. Second, the as-prepared ZnO thin films were employed to fabricate horizontal structures of metal – semiconductor – metal (MSM) with Ohmic contact behavior. The interdigital Pt electrodes having thickness of 100 nm were deposited onto the ZnO films using sputtering and lithography techniques. In order to improve the sensitivity as well as reduce the loss-efficiency of the Pt electrodes and the ZnO films, the rapid thermal annealing procedures were carried out in Ar, N2, and vacuum ambient under 5 Torr of pressure, 150 oC to 550 oC of temperature, and 5 to 20 minutes of annealing time. The results showed that the Ohmic contact was obtained in Ar ambient at 450 oC for 10 minutes. From electrical investigations, the dark and photo currents were 5 mA and 30 mA, respectively. This revealed that the fabricated device possessed highly response to UV irradiation with exponential function. Also, the results showed that the measured currents increased by 80% after 6.26 seconds of irradiation and quickly reduced to originated condition. The results in this study indeed demonstrated the potential application of ZnO thin films in UV detectos.

參考文獻


蘇青森著,真空技術,臺北市:東華書局,1992。
J. G. Lu, S. Fujita, T. Kawaharamura, H. Nishinaka, Y. Kamada, T. Ohshima, Z. Z. Ye, Y. J. Zeng, Y. Z. Zhang, L. P. Zhu, H. P. He, and B. H. Zhao, "Carrier concentration dependence of band gap shift in n-type ZnO:Al films, " Journal of Applied Physics, vol. 101, no. 8, 2007, pp. 083705-1 - 083705-7.
S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, "Contact Properties of Au/Mg0.27Zn0.73O by Different Annealing Processes," Journal of Physical Chemistry C, vol. 114, no. 49, 2010, pp. 21757–21761.
J. Li, K. B. Nam, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Band-edge photoluminescence of AlN epilayers," Applied Physics Letters, vol. 81, no. 18, 2002, pp. 3365-3367.
D. K. Hwang, M. S. Oh, J. H. Lim, and S. J. Park, "ZnO thin films and light-emitting diodes," Journal of Physics D: Applied Physics, vol. 46, no. 22, 2007, pp. R387-R412.

被引用紀錄


蘇智偉(2014)。光誘導氧化鋅薄膜之表面潤濕最佳化研究〔碩士論文,國立臺北科技大學〕。華藝線上圖書館。https://doi.org/10.6841%2fNTUT.2014.00229

延伸閱讀