40 keV硼離子佈植對於氧化鋅薄膜之影響研究

An Investigation of ZnO (002) Thin Films Implanted by 40 keV Boron Ions

吳喜成(shi-chen Wu 吳喜成)

指導教授 ： 魏大華

國立臺北科技大學/機電學院/機電整合研究所/碩士(2011年)

https://doi.org/10.6841/NTUT.2011.00149

摘要

本論文研究係利用串級加速器的前級加速段 40 kV將硼離子佈植於氧化鋅（Zinc Oxide）薄膜來研究其特性結構之影響。所選用硼離子的佈值能量為40 keV ，以5×1013 (ions/cm2)的劑量佈植於矽基材以及玻璃基材上的氧化鋅薄膜。分別以X-ray繞射晶體結構分析儀做結晶面向分析、二次離子質譜儀來分析佈植硼離子的縱向深度、原子力顯微鏡做表面粗糙度與型態分析。藉以探討氧化鋅薄膜經硼離子佈值後對於氧化鋅表面形貌、C軸優選取向、texture、grain size等的影響
由實驗的結果得知，以40 keV 硼離子佈值在矽基材上或玻璃基材上的氧化鋅薄膜，經XRD的量測發現其主晶軸（002）半高寬有變小的趨勢，顯示其結晶性有變佳的趨勢；而由AFM的檢測發現薄膜表面的粗糙度在佈植處理後較為平滑。由SIMS分析了解硼離子佈值後的縱向深度，佈植的硼離子分佈在表面下約0.19μm，佈植深度與由電腦模擬估算的結果相當一致。由此得知氧化鋅經硼離子佈值後的特性影響，可做為未來在開發氧化鋅的製程上的改良或運用，進而改進其特性來發展新的運用領域。

關鍵字

氧化鋅 ； 硼 ； 離子佈植

並列摘要

In this study, the characteristics of ZnO films were investigated after the film was implanted with boron ions by using a 3MV Tandem Accelerator. The ZnO films were first deposited on the silicon and glass substrates. All specimens were then implanted the 40 keV and 5×1013 ions/cm2, respectively. The XRD, AFM and SIMS were used to study the crystalline, the surface morphology and the distribution of ions. The preferential orientation, texture and grain size of ZnO film were affected by boron ions are discussed.
According to XRD results, the FWHM of ZnO values decreased in the implanted specimens. It revealed that the boron implantation is useful for forming c-axis alignment of ZnO films. The surface roughness was also observed to decrease with the boron treatment. From the SIMS analysis, the distribution of boron ions was within the depth of 0.19μm. It’s very consistent with the SRIM simulation. The results demonstrate that the characteristics of ZnO film could be modified by using the 40 keV boron ion implantation.

並列關鍵字

Zno ； Boron ； Ion implantation

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