氣凝合成法製作氮化硼奈米管特性之研究

Study on Properties of Boron Nitride Nanotubes Prepared by a Modified Plasma Arc Gas Condensation Technique

張奕傑(Yi-Chieh Chang)

指導教授 ： 蘇程裕

國立臺北科技大學/機電學院/製造科技研究所/碩士(2009年)

https://doi.org/10.6841/NTUT.2009.00237

摘要

本研究主要是以電漿電弧為加熱源蒸發氧化硼靶材，並以氣凝合成法合成氮化硼奈米管，由於氧化硼為不導電材料，一般製作氮化硼奈米管的方法不外乎使用雷射、雷射與電漿混合使用做為加熱源，或是在氧化硼粉末中添加金屬材料作為導電。本研究使用的方法為變更導電電極為石墨棒以及鎢塊合成氮化硼奈米管。藉由電漿電弧的氣凝合成機制，分別探討不同壓力、不同導電電極對形成氮化硼材料之影響。
由微結構的分析結果得知，不論使用石墨棒或鎢塊做為導電電極，其氮化硼奈米管的數量都與真空腔體壓力成反比，而此現象在壓力400Torr最為顯著，且經XRD比對後兩者結構皆為o-BN相態，在(211)的晶面成長，成長機制可以由氣-固相(Vapor-Solid, VS) 法解釋，在此次研究中的FT-IR吸收光譜圖中可以看到多種介面結構共存現象。由UV-visible光譜結果得知，氮化硼的材料接近近紫外光區，其能隙為4.28~4.37eV，並由PL激發光譜得知分別會在紫外光(373nm)及藍光(469nm、470nm)波段位置產生發光現象。

關鍵字

電漿電弧 ； 氣凝合成 ； 氮化硼 ； 石墨

並列摘要

The aim of this research is to prepare boron nitride (BN) nanotubes by evaporating the target composed of the carbon rod and tungsten bulk via modified plasma arc gas technique. The effects of the chamber pressures and electrodes on the synthesis of BN nanomaterials were also studied.
The results show that the yields of the BN nanotubes are inverse-proportional to the chamber pressures, particularly at 400 Torr. With XRD data, the as-prepared materials are o-BN phase with growth plane of (211). Many co-existence structures can be observed by FT-IR measurement. The band gap of BN nanotubes are 4.28~4.37 eV estimated by UV-visible spectrum. The PL peaks are shown in ultra-violet (373nm) and blue range (469nm、470nm).

並列關鍵字

Plasma Arc ； Gas Condensation ； Boron Nitride ； Graphite

參考文獻

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