本論文提出使用微機電開關整合於射頻CMOS的 Class A類功率放大器之研究。該功率放大器是以TSMC 0.18μm 1P6M CMOS製程實現,工作電壓為1.8V。結果顯示當系統操作在2.4 GHz下,輸入功率為-7dBm時,輸出功率為16dBm,PAE為20%,在5.2 GHz下,輸入功率為2dBm時,輸出功率為15dBm,PAE為19%。我們希望設計出高整合度、低消耗功率的功率放大器,經過電路模擬我們設計出一個On-Chip的功率放大器,避免使用Lump元件以減少面積的損耗。 該微機電開關則是設計一個具備體積小、製作容易、低損耗(Low Insertion Loss)以及高隔離度(High Isolation)的射頻微機電開關,動作原理為利用靜電吸引力的方式來驅動懸臂樑,使懸臂樑接觸點與傳輸線相互接觸,達到切換之目的,懸臂樑金屬接觸點利用SiO 2來隔絕直流操作電壓與傳輸線的高頻訊號,並且結合局部化鎳浸金製程將金鍍於金屬接觸點上,來有效防止金屬接觸點氧化。
The thesis demonstrates that the Class A power amplifier is presented based on RF CMOS integrates with MEMS switches. The power amplifier is fabricated in TSMC 0.18μm 1P6M CMOS process. Its operation voltage is 1.8 V. The experimental results show that the input power is -7dBm, the output power is 15dBm and its PAE is 20% at a frequency of 2.4 GHz and that the input power is 2dBm, the output power is 15dBm and its PAE is 19% at a frequency of 5.2 GHz. We desire to design the high integrated and low power consumption power amplifier. By the circuit simulations, we design the On-chip power amplifier. Avoiding using Lump elements is for the reduction of the area consumption. A high-frequency micro-electromechanical switches was designed a small size, making easy, low-loss (Low Insertion Loss) and high isolation (High Isolation) high frequency micro electromechanical (MEMS) switches. The switch actuation principle is a way to use static electricity to drive the cantilever beam, when an appropriate voltage was applied, the contact point of cantilever contacts with the transmission line to achieve the purpose of switching. DC operating voltage of cantilever and high frequency signal on transmission line were isolated by using SiO2 at contact point of Cantilever. With the structure after the etching process, after suspension, and apply the ENIG process, not only to effectively prevent the oxidization of aluminum material, but also to reduce the signal transmission line losses.
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