結合CMOS-MEMS與化鎳浸金製程設計射頻開關與可變電感

Design RF Switch and Variable Inductor by CMOS-MEMS Processes and Electroless Nickel Immersion Gold (EN/IG)

羅宇志(Yu-Chih Lo)

指導教授 ： 黃榮堂 ； 蔡定江

國立臺北科技大學/機電學院/機電整合研究所/碩士(2011年)

https://doi.org/10.6841/NTUT.2011.00354

摘要

研究依照國家晶片系統設計中心( National Chip Implementation Center，CIC )之製程規範作為設計之準則，並採用台積電TSMC 0.18μm 1P6M COMS-MEMS共用製程設計一個具備體積小、製作容易、低損耗(Low Insertion Loss)以及高隔離度(High Isolation)的射頻微機電開關，動作原理為利用靜電吸引力的方式來驅動懸臂樑，使懸臂樑前端接觸點與傳輸線相互接觸，達到切換之目的，懸臂樑前端金屬接觸點利用SiO 2來隔絕直流操作電壓與傳輸線的高頻訊號，並且結合局部化鎳浸金製程將金鍍於金屬接觸點上，除了有效防止金屬接觸點氧化，也降低了傳輸線的插入損失。

關鍵字

CMOS製程 ； 微機電製程 ； 射頻微機電 ； 化鎳浸金

並列摘要

The study, mainly used a standard 0.18μm complementary metal oxide semiconductor (CMOS) process to design a small size, easy fabricated, low insertion loss and high isolation high frequency micro electromechanical (MEMS) switch. And CMOS process can be compatible with the MEMS process. The principle switch actuation of is a way to drive the cantilever beam by using static electricity. When an appropriate voltage was applied, the front of cantilever contacted with the transmission line to be the purpose of switching. DC operating voltage of cantilever beam and high frequency signal on transmission line were isolated by using SiO2 at the front metal contact point of contilever beam. After the releasing process, the study, conducts the ENIG process. And that is not only to effectively prevent the oxidization of aluminum material but also to reduce the insertion loss of signal transmission line.

並列關鍵字

CMOS-MEMS ； RF-Switch ； EN/IG

參考文獻

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