本研究成功利用四元共蒸鍍法製備銅銦鎵硒薄膜,並搭配如康寧玻璃基板、金屬鉬背電極、硫化鎘緩衝層、氧化鋅透光層以及鋁正面電極製作銅銦鎵硒薄膜太陽能電池。 而共蒸鍍法所使用的元素來源為Cu、In、Ga、Se四元素個自獨立之單一鍍源,藉由將欲鍍之顆粒狀各元素置於坩鍋並各自獨立昇溫加熱,利用被蒸鍍物在高溫(接近其熔點)時所具備的飽和蒸氣壓,並控制各鍍源之活動遮板來進行薄膜的沉積與成分控制,腔體內真空度要求介於10 -4~10 -6 torr之間。 在本研究中將針對CIGS薄膜中的元素成分比例做討論,對於在單一階段共蒸鍍製程中改變元素比例觀察對於其結晶相的影響,由於一般的CIGS吸收層會呈現些微的Cu-deficient現象,也就是Cu/In+Ga值約落在0.9~0.95之間,在此將調整銅蒸鍍源溫度由1356℃至1376℃,每2℃做一個區隔,將Cu/In+Ga控制在0.58到0.92之間並觀察該薄層性質變化,並以XRD確認結晶相結構。整體製備過程成功簡化為單一階段四元共蒸鍍,製備時間縮短至40 min之內,具有製備時間更短流程更簡易的優勢。 經過評估後取其中較適合的參數範圍進行CIGS太陽能電池堆疊製作並加以分析電池特性以及轉換效率的量測,成功製備轉換效率達到6.95%的CIGS太陽能電池。
In this study,we successfully prepared CIGS absorber layers by multi-source thermal co-evaporation system,and we choose the Corning glass substrate, metal molybdenum back contact, CdS buffer layer, Window layers of Intrinsic-ZnO、ZnO doping aluminum and aluminum front contact to product CIGS thin film solar cell. Copper, indium, galium, selenium, each element evaporation source are the independent, we put the granular element in the independent crucible and heating, used the saturated vapor pressure (close to its melting point) of each materials and control the CIGS thin films growth and it’s composition by each evaporation source activities shutter. Main chamber’s vacuum requirements ranging between 10-2 ~ 10 -6 torr. We focus on CIGS thin films elemental composition ratio to research and investigate, try to change the elemental composition ratio to discuss the effect of crystal phase. General CIGS absorber layer will show a small amount of Cu-deficient phenomenon, about Cu / In + Ga ratio between 0.9 ~ 0.95, so in this study we change the copper evaporation source temperature from 1356 ℃ to 1376 ℃, 2 ℃ to do a change, will be Cu / In + Ga control from 0.58 to 0.92, observed crystalline phase structure by XRD。Totaly preparation process success simplify of the single stage of co-evaporation, preparation time is shortened to within 40 min, with a shorter preparation process more simple advantage. After assessment, we choose appropriate range of parameters for production of CIGS solar cells and analyzed cell characteristics and conversion efficiency measurements, the successful conversion efficiency of 6.95% preparation of CIGS solar cells.
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