玻璃陶瓷添加氧化鋁填充材對其微波介電性質之影響

Effects of Al2O3 Filler on the Microwave Dielectric Properties of Glass-Ceramics

邱見有(Jan-Yo Chiou)

指導教授 ： 王玉瑞 ； 王錫福

國立臺北科技大學/工程學院/材料及資源工程系所/碩士(2006年)

摘要

本研究目的為製備出低介電常數及低介電損耗，並可於低溫燒結之玻璃陶瓷複合材料，應用於微波介電陶瓷基板。利用一種實驗室自行熔融的鎂鋁矽(MAS)玻璃及三種商用玻璃(GA-50、GA-47及GA-13)，添加不同含量的α-氧化鋁當作填充材，針對其緻密化程度、結晶相、介電性質及熱膨脹係數等各項性質進行分析，比較期間之特性差異。
鎂鋁矽系統添加30 wt％氧化鋁於925℃持溫30分鐘可達緻密，密度為2.68g/cm3。XRD分析可知主要結晶相為α-氧化鋁與μ-堇青石，次要相為(Mg,Al)SiO3。於低頻率(4-5 GHz)時，測得介電常數值為5.28及介電損耗為0.003。GA-50系統添加40 wt％氧化鋁於1025℃持溫30分鐘可達完全緻密，密度2.55g/cm3。XRD分析顯示主要結晶相為α-氧化鋁及基材殘存的非晶質玻璃相。低頻率(4-5GHz)時，介電常數值為4.80及介電損耗約為0.004。GA-47系統添加35 wt％氧化鋁於900℃持溫30分鐘燒結緻密，密度為2.68 g/cm3。XRD分析顯示整體主要結晶相為α-氧化鋁、微量方石英及基材殘存的非晶質玻璃相。於低頻率(4-5GHz)時，介電常數值為5.54及介電損耗為0.015。GA-13系統添加30 wt％氧化鋁於825℃持溫30分鐘後燒結緻密，密度為3.23 g/cm3。XRD分析結果發現主要結晶相為α-氧化鋁、微量方石英及非晶質玻璃相。於低頻率(4-5GHz)時，介電常數值為7.01及介電損耗為0.006。

關鍵字

玻璃陶瓷 ； 基板 ； 填充材 ； 氧化鋁 ； 介電性質 ； 熱膨脹係數

並列摘要

Low firing-temperture, low dielectric constant and dielectric loss glass-ceramic composites has been developing as a LTCC substrate for microwave applications. The effect of α-Al2O3 additive on the properties of glass was investigated in this study. Four kinds of glass are selected as raw material, which include Mg-Al-Si glass (MAS) made in lab and the others are commercial products (GA-50,GA-47 and GA-13). α-Al2O3 as a filler was added into the samples with the amount of 30wt%, 35wt% and 40wt%, respectively. The densification, crystal phases, dielectric properties and coefficient of thermal expansion (CTE) were characterized.
MAS glass with 30wt% α-Al2O3 filler sintered at 925℃ for 30 mins can be densified and the sintering density of 2.68g/cm3 is obtained. The major crystal phases are α-Al2O3 and μ-cordierite, and the minor phase is (Mg,Al)SiO3. The dielectric constant and dielectric loss are 5.28 and 0.003 (4-5 GHz), respectively. GA-50 glass with 40 wt% α-Al2O3 filler sintered at 1025℃ for 30 mins can be densified. The sintering density is 2.55g/cm3. The major crystal phases are α-Al2O3 with limited glass. The dielectric constant abtained are 4.80 and dielectric loss is about 0.004 at 4-5 GHz. GA-47 glass with 35 wt% α-Al2O3 filler sintered at 900℃ for 30 mins can be densified and the density of 2.68g/cm3 is obtained. Crystal phases are α-Al2O3, cristobalite and limited glass. The dielectric constant and dielectric loss at 4-5 GHz are 5.54 and 0.015, respectively. GA-13 glass with 30 wt% Al2O3 filler was sintered at 825℃ for 30 mins. The density sintering of 3.23 g/cm3 is obtained. XRD result shows α-Al2O3 and limited glass are major phases and cristobalite exists as a trace phase. The dielectric constant and dielectric loss are 7.01 and 0.006 at 4-5 GHz, respectively.

並列關鍵字

Glass-ceramic ； Substrate ； Filler ； Al2O3 ； Dielectric properties ； CTE

參考文獻

[3] 陳志榮，“應用於低溫共燒之氧化鑭/氧化鋁/氧化硼基玻璃陶瓷之製程及特性分析”，國立台灣大學材料科學與工程研究所博士論文，(2004)。

[32] Michel Barsoum, “Fundamentals of Ceramics.” The McGraw-Hill Companies, P.371-377,1997.

[6] R.R. Tummala,“Ceramic and Glass-Ceramic Packaging in the 1990s.” J. Am. Ceram. Soc., 74[5]P.895-908, 1991.

[8] W.H. Zachariasen,“The atomic arrangement in glass.” J. Am. Ceram. Soc., 54 P.3841-3851, 1932.

[11] W. Hinz,“Nucleation and Crystal Growth.” J. Non-cryst. Solids, Vol.25, P.215-260, 1977.