本研究首先建立化學機械研磨二維軸對稱準靜態邊界元素模式,模擬晶圓負載、研磨墊厚度及研磨墊之楊氏係數等參數對晶圓表面von Mises 應力分佈的影響。藉由改變各項參數,獲得von Mises應力改變之趨勢,結果顯示上述趨勢與表面不均勻度之趨勢一致。比較由推論多項式網路訓練所得的應力分佈及不均勻度估計值和實驗量測值,證明本文所建立的推論式網路預測模式應用在晶圓表面不均勻度之研究上,具有一定的可行性。
In this paper, a two dimensional axisymmetric quasi-static boundary element model for the chemical mechanical polishing process (CMP for short) was established. In this model, the load forms are carrier load, the thickness and young’s modulus of pad. Effect of above parameters on von Mises stress and nonuniformity of wafer were investigated. The trend of the distribution of von Mises stress and nonuniformity of wafer matched well. The comparison between the estimated value from the abductive polynomial network training and the measured value proves that the developed network model possesses a certain degree of feasibility in the study of the nonuniformity of wafer after CMP process.