塗佈製程對微影圖案均勻性改善之研究

Study on uniformity improvement of lithography pattern due to coating process

蘇峯民(Fung-Min Su)

指導教授 ： 劉宗平

元智大學/電機通訊學院/光電工程學系/碩士(2013年)

https://doi.org/10.6838/YZU.2013.00088

摘要

由於小尺寸面板皆朝高畫素、高開口率面板邁進，所以微影製程圖案的線寬均勻性便顯得更加重要，因微影圖案均勻性太差會導致製程餘裕度太小，此次實驗可大幅改善微影圖案均勻性，製程中使用迪恩仕公司所製作的SK-1500 G6設備，利用優化vacuum dry exhaust製程参數及改善pre-bake平坦度及溫度之均勻性，使微影圖案均勻性提升約53%，由實驗中可知改善vacuum dry 抽氣速率及pre-bake平坦度及溫度之均勻性，使玻璃基板光阻中溶劑含量越均勻，便可以改善微影製程圖案之均勻性，如果利用此方法使微影製程圖案均勻性越趨近於零，這就意味著未來的微影製程餘裕度將越來越大。

關鍵字

塗佈製程 ； 微影圖案 ； 均勻性

並列摘要

The lithography pattern line width uniformity becomes important because the small size panels are toward the high resolution, high aperture ratio panel forward. Because if lithography pattern uniformity is not good the process limit will be too narrow, This experiment demonstrates clear evidence of improvement in lithography pattern uniformity. The study used DNS SK1500 G6 equipment and vacuum dry exhaust processing parameters. There were also improvements in pre-bake plate level and temperature uniformity. The lithography pattern improved uniformity to 53%. The results showed that when vacuum dry rate and pre bake plate temperature uniformity was improved, and thus the level solvent in glass panel was more even, and lithography pattern uniformity was improved too. Using this method made lithography pattern uniformity approach the figure of zero, it means that lithography process margin limits will be larger in the future.

並列關鍵字

coating process ； lithography pattern ； uniformity

參考文獻

[3] 林晏晉，〈以半遮式光罩技術簡化薄膜電晶體陣列製程之研究〉，碩士論文，中原大學機械研究所，2009年。

參考文獻

[1] LCD液晶螢幕資訊網， http://www.lcd-monitor.com.tw/。

[2] 蔡汶哲，〈嵌入式LCD驅動電壓電路設計〉，碩士論文，逢甲大學資訊電機工程所，2009年。

[4] 顧鴻壽，〈光電液晶平面顯示器技術基礎及應用〉，初版，新文京出版社，臺灣，2004年。