本論文主要是利用有機金屬化學氣相沉積法(MOCVD),生長出晶格常數較匹配的磷化銦鎵/鍺之太陽能電池及磷化銦鎵/砷化銦鎵/鍺之太陽能電池。研究優化磷化銦鎵材料用於P-N接面之間的本質層得到最佳厚度,增加電子-電洞對的分離能力。同時也針對窗口層InAlP材料的厚度進行優化,以減少表面載子複合速率。其目的是為了提升三接面太陽能電池的光電轉換效率,並降低Ⅲ-Ⅴ族太陽能電池發電成本。
This study of the growth of the lattice constants than matched InGaP/Ge and InGaP/ InGaAs/Ge solar cells by using a metal organic chemical vapor deposition (MOCVD) method. Optimization of InGaP materials for the intrinsic layer best thickness at between the P-N junction, and decreased the probability of the electron-hole recombination. Also optimization of the window layer best thickness using InAlP materials at the top layer, and in order to decrease the carrier surface recombination rate. The purpose is to improve the photoelectric conversion efficiency of the triple junction solar cells, and reduce the cost of Ⅲ-Ⅴsolar cells power generation.