透過您的圖書館登入
IP:44.192.93.109
  • 學位論文

台灣快閃記憶體廠商經營策略與競爭優勢之研究-以某半導體公司為例

A Study of Business Strategy and Competitive Advantages of Flash Memory in Taiwan Semiconductor Industry - A Semiconductor Company Case

指導教授 : 林博文
若您是本文的作者,可授權文章由華藝線上圖書館中協助推廣。

摘要


近幾年來快閃記憶體(FLASH Memory)快速成長,加上NAND Flash的應用面不斷創新,其產值有如當年動態隨機記憶體(DRAM)的成長速度,在半導體產業已成為舉足輕重的產品,世界各國半導體廠商均看好快閃記憶體產業之未來發展,希望藉此研究能替生產FLASH的台灣廠商,提出可行的經營策略。 本研究將藉由資料的收集,從全球FLASH記憶體產業的快速轉變情勢與競爭關係中,找尋未來台灣FLASH產業的競爭優勢,進而以實際的個案為例探討其成功要素為何及臺灣如何進入NAND Flash產業。 由於NOR Flash之技術越來越成熟,市場成長趨於緩慢,本研究發現,過去決定快閃記憶體的三個重要的成功關鍵因素『專利』、『製程技術』與『規模經濟』不再適用於NOR Flash的經營策略,而台灣Flash廠商幾乎都是NOR Flash的供應商,其獲利率並不比國際一線大廠差,主要是台灣Flash廠商在NOR Flash產品策略及製造成本上取得優勢與創新。反觀追求高階製程技術的國際大廠,並未因擁有先進技術而提高獲利,NOR Flash的經營策略值得探討。 NAND Flash則是一個高技術與高資本密集產業,『專利』、『製程技術』與『規模經濟』只是進入者應具備的基本條件,此外,還需要更大的策略聯盟來提昇競爭力才能勝出,台灣半導體廠商目前在NAND Flash市場上的競爭力與國外大廠仍有相當的差距,輕易投入NAND Flash開發,未來有可能成為公司的燙手山芋。本研究建議,參考當年台灣DRAM記憶體的發展歷程,結合國外大廠的絕對製程技術優勢與台灣經驗豐富的生產技術和完整的半導體產業鏈,台灣有機會成為全球NAND Flash重要生產地。

關鍵字

快閃記憶體

並列摘要


In recent years, the Flash Memory market grew up fast. In addition, the new application of NAND Flash was innovated unceasingly, its CAGR (Compound Annual Growth Rate) had like the same year DRAM growth speed, and has become the pivotal product in the semiconductor industry. The world wide semiconductor factories are optimistic on its future development. Hoped took advantage of this research to proposed the feasible management strategy for Taiwan Flash factories. Collecting data from second hand information, from global Flash memory industry fast transformation circumstance and the competition relations, This research will pursue the competitive advantage of future Taiwan Flash industry. By exploring a solid case in Taiwan to determine what the successful key factors are and provide some opinions for Taiwan’s companies to enter NAND flash industry. NOR Flash industry become more and more mature, the market growth tends to slowly. This research discovery, three important success key factors "patent", "technology" and " economies of scale" no longer are suitable for the NOR Flash management strategy. Now all Taiwan flash factories are almost the NOR Flash supplier, but their profit rate is not certainly worse than the international Flash factories. Counter- view, the international Flash factories built up newest advance technology, but they didn’t get good return from it. It is worth to think about what is the right strategy on NOR flash inductry. NAND Flash inductry need high investment & advance technology. The "patent", "technology" and " economies of scale" are only the basic requirement for new entrier. Beside, NAND Flash need strategic alliances to enhance competitiveness. At present, it is not suitable for Taiwan factories to invest NAND Flash development by themselves. This research suggestion, to refer same year Taiwan DRAM development course, the union of international Flash factories' advance technology and the Taiwan's experienced production technology and Taiwan integrity semiconductor industry chain, Taiwan had the opportunity to become global NAND the Flash important production place. Key Word : Flash Memory

並列關鍵字

Flash Memory

參考文獻


12. 「洞悉半導體IC製造產業暨市場脈動」,拓墣產業研究所,2006/4。
13. 「2007全球記憶體產業趨勢探微」,拓墣產業研究所,2007/5。
6. 李文傑,「利用專利分析評估半導體企業的技術定位與發展—以快閃記憶體」,國立交通大學管理學院碩士在職專班科技管理組,2004。
1. 麥克•波特,李明軒、高登第譯,競爭論,天下遠見,1985。
2. 麥克•波特,周旭華譯,競爭策略:產業環境及競爭者分析,天下遠見,1980。

延伸閱讀