聚偏氟乙烯與鐵酸鉍顆粒之複合鐵電膜之製備與結構分析

Preparation and Structural Analysis of PVDF/BiFeO3 composite ferroelectric film

房彥翰(Fang,Yang Han)

指導教授 ： 蘇雲良

國立清華大學/理學院/物理學系/碩士(2015年)

摘要

鐵電材料由於其電滯效應可用在記憶元件方面，因此本研究將採用一種簡單
的製備方法來降低製備成本，但同時又能夠維持鐵電基本該有的電滯特性，希望日後製程改良可以取代昂貴的脈衝雷射蒸鍍製程。實驗中我們將使用水熱法長出BiFeO3鐵電顆粒，接著使用高絕緣性的高分子PVDF與BiFeO3鐵電顆粒進行複合，而在複合的過程中會外加一個強電場來修正鐵電顆粒內部總電偶極矩方向，使其達到極化量增加來提高此複合鐵電膜的實用性。

關鍵字

鐵電

並列摘要

Ferroelectric materials have aroused considerable research interest for their important applications in memory devices due to hysteresis effects. In the present
work, we seek a simple method to prepare ferroelectric materials at low cost while maintaining their basic ferroelectric hysteresis effect. We anticipate that the pulsed laser deposition process may be replaced by our improved preparation method in the future. The BiFeO3 particles were synthesized by a hydrothermal method, then
composited with PVDF. An external electric field was then applied to correct the direction of total dipole moment of the particles in the sample preparation process
for enhancing the polarization.

並列關鍵字

ferroelectric ； BiFeO3

參考文獻

[1] SCIENCE VOL 299 14 MARCH 2003，Epitaxial BiFeO3 Multiferroic Thin Film Heterostructures

[2] Appl. Phys. Lett., Vol. 84, No. 25, 21 June 2004，Dramatically enhanced polarization in ( 001 ) , ( 101 ) , and ( 111 ) BiFeO3 thin films due to epitiaxial-induced transitions

[3] APPLIED PHYSICS LETTERS 98, 192901 _2011_，Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films

[4] Adv. Mater. 2011, 23, 1277–1281，A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors

[5] Appl. Phys. Lett. 89, 192902 _2006_，Enhancement of electrical properties in polycrystalline BiFeO3 thin films