高飽和輸出功率S頻帶摻鉺光纖放大器之研究

The studies of high saturation output power S-band erbium-doped fiber amplifiers

張翔榮(Hsiang-Jung Chang)

指導教授 ： 張彌彰

國立清華大學/電機資訊學院/電子工程研究所/碩士(2009年)

摘要

In this thesis, we demonstrate a high saturation power S-band erbium-doped fiber amplifier (EDFA) by employing high cutoff efficiency C-band ASE suppression filters located in standard C-band silica-based EDFs. First of all, we have made wideband tunable (1250 ~ 1650 nm) fused-tapered short-pass fiber filters with high cutoff efficiency and temperature-tuning efficiency (50 nm/C) by properly choosing the applied dispersive material and the tapered fiber structure. As a result, the saturation input and output power for 1490-nm S-band EDFA using standard EDF are improved to be about +8.8 dBm and +12.2 dBm respectively, under 980 nm pump power of 200 mW in a forward-pumping configuration with a gain of 6 dB. Based on these results, already better than our previous reported results in a higher gain S-band EDFA case, a higher saturation output power can be achieved along with a larger gain by using longer lengths of EDF with more in-line C-band ASE suppression fiber filters.

關鍵字

摻鉺光纖放大器 ； S頻帶 ； 高飽和輸出功率

並列摘要

在此論文中，我們說明了採用高截止效率的抑制C頻帶放大自發幅射濾波器的高飽和功率S頻帶摻鉺光纖放大器，而濾波器置放於C頻帶矽基摻鉺光纖之中。首先，我們製作了寬頻帶(1250~1650 nm)的熔拉低通濾波器，其中透過適當的選用色散材料和熔拉光纖結構，就能夠達到高截止效率與高溫度調整效率(50 nm/C)。最終在採用順向激發架構下，200mW的980nm激發功率可得到6dB的增益，並改善了1490-nm S頻帶摻鉺光纖放大器的飽和輸入功率和飽和輸出功率，分別可達到8.8 dBm和12.2 dBm，這些結果已經比過去一些高增益S頻帶摻鉺光纖放大器的例子還要佳。只要能使用更長的摻鉺光纖並在其中置放更多的C頻帶放大自發幅射濾波器，將可得到更高的增益和更高的飽和輸出功率。

並列關鍵字

erbium-doped fiber amplifier ； S-band ； high saturation output power

參考文獻

[1.1] R. I. Laming, M. N. Zervas, and D. N. Payne, “Erbium-doped fiber amplifier with 54 dB gain and 3.1 dB noise-figure,” IEEE Photon. Technol. Lett. 4, 1345-1347 (1992).

[1.2] N. K. Chen, C. M. Hung, S. Chi, and Y. Lai, “Towards the short-wavelength limit lasing at 1450 nm over 4I13/2  4I15/2 transition in silica-based erbium-doped fiber,” Opt. Express 15, 16448-16456 (2007).

[1.3] M. A. Arbore, Y. Zhou, H. Thiele, J. Bromage, and L. Nelson, “S-band erbium-doped fiber amplifiers for WDM transmission between 1488 and 1508 nm,” in Proc. of OFC 2003, WK2 (2003).

[1.5] N. K. Chen, K. C. Hsu, S. Chi, and Y. Lai, “Tunable Er3+-doped fiber amplifiers covering S and C + L bands over 1490-1610 nm based on discrete fundamental-mode cutoff filters,” Opt. Lett. 31, 2842-2844 (2006).

[1.6] C. M. Hung, N. K. Chen, Y. Lai, and S. Chi, “Double-pass high-gain low-noise EDFA over S- and C+L-bands by tunable fundamental-mode leakage loss,” Opt. Express 15, 1454-1460 (2007).