- 學位論文
具有區域性應變及不同晶向基底之高介電閘極P型場效電晶體之電特性研究
Electric Property of High-k Gated PMOSFET with Local Strained and Different Orientation Substrates
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延伸閱讀
- Chi, P. S. (2009). 高速電子遷移率電晶體及互補式金氧半場效電晶體之微波功率放大器之研究 [master's thesis, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU.2009.00586
- Su, P. H. (2016). 高介電材料金屬閘極塊材鰭式場效應電晶體製程參數分析與電特性建模之研究 [doctoral dissertation, National Chiao Tung University]. Airiti Library. https://www.airitilibrary.com/Article/Detail?DocID=U0030-2212201712085242
- Yu, M. H. (2013). 具有源極汲極應變矽鍺與嵌入式矽鍺通道之28奈米和下世代P型金氧半場效電晶體特性之研究 [doctoral dissertation, National Chiao Tung University]. Airiti Library. https://doi.org/10.6842/NCTU.2013.00268
- Her, W. I. (2010). Emergent Properties in Conceptual Combination. 淡江人文社會學刊, (44), 112-139. https://doi.org/10.29718/TJHSS.201012.0005
- 陳昶安（2019）。Electrical properties of p type GaN film grown by two-heater MOCVD〔碩士論文，國立交通大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0030-0306202016324382