使用氧化鋁(AlOx)和電漿浸潤式離子佈植(PIII)來優化矽異質接面太陽能電池

本論文主要是研究使用氧化鋁(AlOx)和電漿浸潤式離子佈植(PIII)鈍化 (passivate)矽異質接面太陽能電池。當氧化鋁沉積在矽晶圓表面時，在接近晶圓表面的地方會產生一個額外的電場，此電場可有效幫助載子更快速通過晶圓表面，避免被懸鍵抓取，而藉由電漿浸潤式離子佈植(PIII)我們可以將氮離子佈植到元件內部去復合懸鍵，以達到鈍化的效果。實驗一，我們將氧化鋁沉積在太陽能電池表面，可發現短路電流(Jsc)、開路電壓(Voc)、效率(η)分別由27.84 mA/cm2、5.52V、8.97%上升至29.34 mA/cm2、0.54V、9.68%，証明太陽能電池表面有一個場效應鈍化(field effect passivation)。實驗二，我們主要試著調變電漿浸潤式離子佈植(PIII)的能量去控制氮離子的深度，以及調變電漿浸潤式離子佈植(PIII)的時間去控制氮原子的濃度，最後得到最好的條件為能量2Kev、時間10分鐘。最後，我們使用最好的電漿浸潤式離子佈植(PIII)條件，能量2Kev、時間10分鐘，去鈍化沒有經過氧化鋁鈍化過的矽異質接面太陽能電池，得到最好的轉換效率為15.42%、短路電流為37.78 mA/cm2、開路電壓為0.55V、填充因子為0.74。

關鍵字

矽異質接面太陽能電池

並列摘要

This thesis is studying passivated silicon heterojunction solar cell by using aluminum oxide (AlOx) and plasma immersion ion implant (PIII). When aluminum oxide (AlOx) deposited on surface of wafer, the enhance electric field was produced near the surface of wafer, the enhance electric field can improve the mobility of carrier. Therefore, the trapping of carrier by dangling bond will be reduced. And by using plasma immersion ion implant (PIII), we can implant Nitrogen into the device to reduce dangling bond, then achieve passivation effect. Experiment 1, when we deposited AlOx on surface of solar cell, we can observe that short-circuit current density (Jsc), open-circuit voltage (Voc), and conversion efficiency (η) were increased from 27.84 mA/cm2, 5.52V, and 8.97% to 29.34 mA/cm2, 0.54V, and 9.68%. Experiment 2, we try to control the depth of Nitrogen by modulating different energy of PIII, and control the concentration of Nitrogen atoms by modulating different time of PIII. Finally, we obtained the best PIII condition is 2Kev 10minute. Finally, we use the best PIII condition (2Kev, 10min) to passivate heterojunction solar cell without AlOx passivation, then we have achieved the best solar cell conversion efficiency is 15.42%, Jsc is 37.78 mA/cm2, Voc of 0.55V and FF is 0.742.

並列關鍵字

silicon heterojunction solar cell

參考文獻

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使用氧化鋁(AlOx)和電漿浸潤式離子佈植(PIII)來優化矽異質接面太陽能電池

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