非平衡磁控濺鍍法鍍著奈米晶氮化鈦鋯薄膜探討鈦鋯比對結構與性質之影響

Characterization of structure and mechanical properties of nano-crystalline TiZrN films deposited by unbalanced magnetron sputtering: effect of Ti and Zr target current

陳契佑(Chi-You Chen)

指導教授 ： 喻冀平 ； 黃嘉宏

國立清華大學/原子科學院/工程與系統科學系/碩士(2012年)

摘要

二元金屬氮化物薄膜已經被廣泛運用於工業界，用來作為保護基材的薄膜和微電子業的金屬層，主要是因為它具有高硬度，好的抗磨耗能力，以及耐腐蝕能力，隨著科技快速的進展，對於薄膜的品質要求也越來越高。在近十年來，三元的氮化物薄膜，例如:氮化鈦鋯、氮化鈦鋁、氮化鈦矽，開始被廣泛的研究，研究多一個元素的添加對於薄膜性質的影響。
在這次的研究中，我們會利用非平衡磁控濺鍍法於矽基材上鍍上一層具有奈米晶粒的氮化鈦鋯薄膜，並藉由改變鈦靶和鋯靶材的離子電流來改變薄膜鈦鋯比例，鈦靶的電流從0.16安培循序增加到0.32安培,鋯靶的電流也循序從0.32安培調降到0.16安培，並將兩個靶的總電流固定在0.48安培。濺鍍完成的試片將會利用各種儀器與方法進行性質與結構的觀察，我們會利用X光繞射光譜技術來觀察結構，並利用此結果計算出晶粒的尺寸與結構因子，利用低略角X光繞射光譜的結果來計算出薄膜的晶格參數，試片厚度和橫截面結構將會利用場發射掃描式電子顯微鏡觀察並量測得知，再利用拉塞福背向散射光譜技術量測出薄膜的成分比與堆積因子。硬度的量測將使用奈米硬度儀。另外，將使用原子力顯微鏡來得知試片表面的粗糙度，並且使用四點探針進行電阻係數的量測。

關鍵字

氮化鈦鋯 ； 薄膜 ； 磁控濺鍍

並列摘要

Binary metal nitride films has been commonly used in industry as protective coatings and metallization layer in microelectronics due to its high hardness, better wear resistance, and excellent corrosion resistance. With the considerably fast-progressing development in technology, the quality demands of which goes higher. In the past decade, ternary nitride films, such as TiZrN, TiAlN, TiSiN , have been widely researched for the addition of another element enhances the properties of which.
In this study, the nanocrystalline TiZrN thin films were deposited on Si(100) wafer using unbalance magnetron sputtering. The current of Titanium target and that of zirconium target changed from 0.16 to 0.32 A and thus changed the ratio of Ti to Zr, the total target current of which was fixed at 4.8 A. The microstructure of the TiZrN films was characterized by X-ray diffraction (XRD). The texture coefficient and grain size were both calculated according to the result of θ/2θ scans. The lattice parameters of the TiZrN films was calculated according to the result of grazing incident X-ray diffraction. The thickness and cross-section morphology of the TiZrN thin films was further observed and measured using field-emission gun scanning electron microscope (FE-SEM). The composition and packing factor of the TiZrN thin films were determined by the Rutherford Backscattering Spectroscopy (RBS). The composition of the TiZrN films was also determined using X-Ray photoelectron spectroscopy (XPS). The hardness of the TiZrN films was measured using nanoindenter. The electrical resistivity of the TiZrN films was measured using a four-point probe. The surface roughness of the TiZrN films was characterized by atomic force microscope (AFM). The residual stress of the TiZrN films were determined using a laser curvature measurement system.

並列關鍵字

TiZrN ； thin film ； magnetron sputtering

參考文獻

[23] Jia-Hong Huang, Kiang-Wee Lau, Ge-Ping Yu, Surface & Coatings Technology, 191 (2005) 17-24

[9] Da-Yung Wang, Chi-Lung Chang, Cheng-Hsun Hsu, Hua-Ni Lin, Surface and Coatings Technology 130 (2000) 64.

[22] Yu-Lin Kuo, Chiapyng Lee, Jing-Cheng Lin, Chao-Hsien Peng, Li-Chien Chen, Ching-Hua Hsieh, Shau-Lin Shue, Mong-Song Liang, Brian J. Daniels, Cheng-Lin Huang, and Chih-Huang Lai, Journal of The Electrochemical Society, 151 (3) C176(2004)

[15] I. Milosev, H. H. Strehblow and B. Navinsek, Surface And Interface Analysis, VOL. 26, 242 (1998)

[1] O. Knotek, W. D. Münz, T. Leyendecker, J. Vac. Sci. Technol. A 5, 2173 (1987).