- 學位論文
以液相磊晶法成長砷化銦鎵磊晶層在磷化銦基板上之特性研究
Characterizations of InGaAs epilayer on InP substrate grown by LPE
摘要
近年來摻雜稀土元素(Rare-Earth)於III-V化合物半導體的研究，發現其對於提升光電元件之特性扮演著很重要的角色；此乃由於稀土元素對氧以及其他VI族的元素有極強的親和力，因此有吸附雜質以降低背景濃度之效果，有助於提昇光電元件之特性。 本論文以液相磊晶(LPE)方式成長砷化銦鎵(In0.53Ga0.47As)晶膜於磷化銦(InP)基板上，並摻雜稀土元素鈥(Ho)來探討其對材料所造成結晶性、光特性和電特性的影響。 在磷化銦(InP)基板上可以得到近乎完全晶格匹配(Lattice-Match)和表面型態非常平坦的砷化銦鎵(InGaAs)晶膜，但加入鈥之後，由DCXD發現，鈥的摻雜量會造成晶格不匹配度的增加，且表面型態變差，但不匹配度還是低於0.035％；由PL量測顯示摻雜稀土元素有助於提升光特性；由霍爾量測顯示出摻雜鈥後，其對磊晶層的光特性和載子濃度均有改善。 最後，以相同條件在磷化銦圖案基板上，成長未摻雜之砷化銦鎵液相橫向磊晶層。藉由N-DIC與μ-PL量測來討論其與無圖案之磊晶層之間的差異。
並列摘要
Rare-Earth (RE) treated III-V compound semiconductors have been of great interest recently. Many research had discovered that the RE elements have a strong affinity to oxygen and other group VI elements, and this effect can be used to perform effective gettering of background donors and acceptors in III-V semiconductors. In this study, we grow In0.53Ga0.47As epilayers on (100)-oriented InP substrate by liquid phase epitaxy(LPE) and add Rare-Earth elements (Ho) into the growth solution to reduce the background carrier concentration. The influence of Ho on the optical characteristics and electrical characteristics of the semiconductor material is investigated. We have obtained the InGaAs on InP which the almost lattice match and the surface was very smooth. From DCXD measurements, it is found the surface morphologies of the In0.53Ga0.47As layers become poorer since the lattice mismatch increases as the Ho weight percentage increases. But, the lattice mismatch was lower than 0.035%. From PL and Hall measurements, optical and electrical characterizations of InGaAs epilayers indicate that both optical and electrical properties of InGaAs epilayers are improved by Ho treatment. Finally, we performed originally the In0.53Ga0.47As liquid phase epitaxial lateral overgrowth on patterned InP(100) substrate. By N-DIC andμ-PL measurements, we found different layer qualities with and without patterned InP substrates.
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