由於半導體製程的進步,元件均朝向微型化發展,其線上檢測之需求與日俱增,故本研究採用傳統的投射條紋輪廓學(Projection Fringe Topography)與相位調變分析的理論,結合高速、高解析度之CCD掃描擷取影像的技術,針對尺寸在10~50μm間之半導體封裝元件---覆晶凸點(flip chip bump) 進行其線上三維輪廓量測儀研製。 由於本研究所採用CCD攝影機係以細長條型影像掃描待測物,每秒鐘可擷取約166張影像,十分適合於以輸送帶方式傳送之元件的線上量測使用,量測時所採用的影像解析度為1600*50像素點,當量測範圍為16mm*0.5mm時,其橫向解析度為10mm。目前設定的投射條紋間距為311μm,根據 CCD擷取解析度為8bit,故高度解析度可達1.21μm。經對一9mm*9mm*50μm的標準試件進行量測比對,實驗結果顯示其量測準確度可達1.5μm。整合本研究的成果後,除了覆晶凸點三維形貌檢測外,此量測儀亦可提供為其他微機電與半導體封裝元件之外型輪廓線上高速檢測使用。
Due to the progress of the semiconductor industry, the components are getting microminiaturized. Besides, demands of the on-line measurement system are also growing up. Therefore, this research is combining the techniques of projection fringe topography and phase shifting interferometry with a high speed and high resolution CCD to focus on completing the 3D profile on-line measurement system for components with size between 10µm-50µm. A typical example is the bump measurement on a flip chip PCB. In this research, by using of a progressive scan CCD to scan the object in speed of 166 frames per second via adjusting to a slender image is quite suitable for the developed system. The image in measurement is 1600*50 pixels corresponding to the measuring range of 16 mm*0.5mm. According to the CCD resolution of 8 bit and the interval of projected fringe of 311µm, the height measurement resolution is 1.21µm. A flat plate with a step of 9mm*9mm*50µm is used to verify the system performance. Experimental results show that the measurement precision can reach to 1.5µm. It shows not only 3D profile inspection in flip chip bump but also this measurement system can be used in other MEMS or IC assembly components.