以反應性磁控濺鍍法製備矽化物 氣體阻障層之研究

Fabrication of Silicon-based Barrier Coatings using Reactive Magnetron Sputtering

吳權吉(Chuan-Chi Wu)

指導教授 ： 魏大欽

中原大學/工學院/化學工程研究所/碩士(2005年)

https://doi.org/10.6840/cycu200500566

摘要

有機發光二極體( OLED )由於具有視角廣、應答快及自發光等優點，被視為最有可能成為下一世代平面顯示器之主流。然而，在OLED元件中，有機材料及金屬電極對於氧氣、水氣相當敏感，因此在元件製作完成時，需經過封裝保護程序。現行已量產之封裝技術，乃是以金屬或玻璃封蓋貼附強力吸水劑，並藉由低透濕性UV樹脂與顯示基板緊密貼合。此封裝技術雖然可有效提升元件壽命，但對於往後開發可撓式有機發光顯示器( Flexible OLED )，應用將有所限制。
本研究以反應性射頻磁控濺鍍法，製備矽化物( 氮化矽、氧化矽 )氣體阻障層，探討反應器腔體壓力、氣體流量配比及鍍膜厚度等製程參數，對矽化物/PET複合膜水氣透過率之影響。實驗結果發現，在低腔體壓力及適當氮氣、氧氣/氬氣配比下，氮化矽、氧化矽/PET複合膜擁有良好阻氣特性，從原始之PET基材水氣透過率，38 g/m2/day，分別降低至0.63、1.69 g/m2/day( 測試條件為60 oC、95 % RH )。而從UV-Vis分析中得知，氮化矽、氧化矽膜材之可見光穿透度皆大於90 %；此外，其水氣阻障臨界厚度分別為30 nm及20 nm。在水氣透過性質方面，藉由串聯阻力模型計算得知，電漿濺鍍氧化矽、氮化矽膜材之水氣透過率約為PET基材之1/17500及1/48000；另一方面，利用遲滯時間方法求得，矽化物之水氣擴散係數約為PET基材之1/106。
綜合以上數據分析，相信本研究沉積之矽化物氣體阻障層，將可應用於可撓式有機發光二極體封裝產業。

關鍵字

反應性磁控濺鍍 ； 有機發光二極體 ； 氣體阻障層 ； 水氣透過率

並列摘要

Recently, organic light emitting devices (OLED) have attracted much interest in industry. However, the lifetime of OLED shows relatively poor stability. One of the main issues is the formation of dark spots due to moisture and/or oxygen ingress. Thus, a barrier layer is needed in OLED encapsulation. Nowadays, the encapsulation of OLED is covered with glass or metal and therefore limited the application of flexible OLED.
In this study, we reported the water vapor transmission rate (WVTR) of silicon-based barrier film (including nitride and oxide), deposited by RF reactive magnetron sputtering without substrate heating, as a function of reactor pressure, gas flow ratio and coating thickness. It was found that while the WVTR of bare PET film was 38 g/m2/day when measured at 60 oC and 95 % RH, the WVTR of SiNx/PET and SiOx/PET composite films, deposited under the optimal conditions, were about 0.63 and 1.69 g/m2/day, respectively. It was also found that the critical coating thickness of SiNx and SiOx films were 30 nm and 20 nm, and the optical transmittance of nitride and oxide films were over 90 %. According to the series resistance model, the WVTR of PET was 17500 and 48000 times of the oxide and nitride barrier films. From the time lag method, the diffusivity of silicon-based barrier films was 1/106 of the original PET film. From these results, the silicon-based barrier films deposited in this work should be very suitable for encapsulating OLED.

並列關鍵字

WVTR ； Gas Barrier Films ； Reactive Magnetron Sputtering ； OLED

參考文獻

【53】 游清彥, “電漿輔助化學氣相沉積法製備OLED元件氣體阻障層之研究”, 私立中原大學碩士論文 ( 2004 ).

【1】 C. W. Tang, and S. A. VanSlyke, “Organic electroluminescent diodes”, Appl. Phys. Lett., 51, 913 ( 1987 ).

【2】 Y. F. Liew, H. Aziz, N. X. Hu, H. S. O. Chan, G. Xu, and Z.Popovic, “Investigation of the sites of dark spots in organic light-emitting devices”, Appl. Phys. Lett., 77, 2650 ( 2000 ).

【3】 S. F. Lim, W. Wang, and S. J. Chua, “Degradation of organic light-emitting devices due to formation and growth of dark spots”, Mat. Sci. Eng. B, 85, 154 ( 2001 ).

【4】 P. E. Burrows, V. Bulovic, S. R. Forrest, L. S. Sapochak, D. M. McCarty, and M. E. Thompson, “Reliability and degradation of organic light emitting devices”, Appl. Phys. Lett., 65, 2922 ( 1994 ).