在藍寶石基板上以兩階段成長法成長氮化鋁薄膜之光學和結構特性

氮化鋁（AlN）為 III族氮化物材料，具有寬帶隙，直接能隙，高的熱穩定性，高導熱，高壓電。氮化鋁被認為是特別有用的硬質塗層，耐腐蝕塗料，高功率微電子，表面聲波器件，光電子和紫外線。藍寶石上成長氮化鋁樣品濺射仍然需要探索由於一些報告都可用。迴旋濺鍍沉積提供了一個更便宜的儀器設置和較低的生長溫度。氮化鋁和藍寶石之間的晶格不匹配度增加薄膜間的缺陷。本論文針對此現象對於結晶層的積極影響作進一步的分析。氮化鋁成長在藍寶石基板上以迴旋濺鍍系統使用兩階段成長法進行了研究，以及光學和結構特性兩階段成長的樣品進行了比較與使用連續成長的方法樣品間的差異。採用 X光繞射檢測氮化鋁的結晶性。以透射測量氮化鋁薄膜的光學特性。兩階段成長法與連續成長方式互相比較之下，成長機制使用兩階段成長方式以迴旋濺鍍系統進行了研究與分析。氮化鋁薄膜在藍寶石基板上成長採用兩階段成長法比連續成長的方法有更好的光學穿透率。兩階段成長樣品比連續成長的樣品表現出更好的透光率在較短的波長（250-450奈米）。因為 AlN緩衝層成長溫度在結晶方面連續成長仍是優於兩階段成長樣品。

關鍵字

氮化鋁；藍寶石；迴旋濺鍍；穿透率；結晶度

並列摘要

Aluminum nitride (AlN) is III-nitride material that has wide bandgap, direct energy bandgap, high thermal stability, high thermal conductivity, and high piezoelectricity. AlN is considered particularly useful for hard coatings, corrosion-resistant coatings, high-power microelectronics, surface acoustic wave devices, and ultraviolet optoelectronics. AlN on sapphire samples grown by sputtering are still need to be explored due to few reports are available. Helicon Sputtering deposition offers a less expensive instrument setup and a lower growth temperature. Large lattice mismatch between AlN and sapphire causes increase of dislocation. The crystallinity of the active layer influences the quality of the device that we want to make. The growth of AlN on sapphire by helicon sputtering system using two-step growth method was investigated; and the optical and the structural properties of two-step growth samples was compared with the samples using continuous growth method. XRD was employed to characterize the crystallinity of the AlN epilayers. Transmittance measurement for investigate the optical quality of the AlN films. The two-step growth method has been presented to be compared with continuous growth method, and the growth mechanism of two-step growth method by helicon sputtering system has been studied. AlN grown on sapphire using two-step growth method have a better optical transmittance compared to the continuous growth method. The two-step growth samples show better transmittance in the shorter wavelength (250-450 nm) compared to the continuous growth sample. The crystallinity of the continuous growth sample is still better than the two-step growth samples; it is possible due to the AlN buffer layer growth temperature.

並列關鍵字

AlN ； sapphire ； helicon sputtering ； transmittance ； crystallinity

參考文獻

1. Q.M. Fu, T. Peng, C. Liu, “Effects of real-time monitored growth interrupt on crystalline quality of AlN epilayer grown on sapphire by molecular beam epitaxy,” Journal of Crystal Growth 311 (2009) 3553–3556

2. D.J. Park, J.Y. Lee, T.E. Park, Y.Y. Kim, H.K. Cho, “Improved microstructural properties of a ZnO thin film using a buffer layer in-situ annealed in argon ambient,” Thin Solid Films 515 (2007) 6721–6725

3. S.H. Jeong, I.S. Kim, J.K. Kim, B.T. Lee, “Quality improvement of ZnO layer on LT-grown ZnO layer/Si(1 1 1) through a two-step growth using an RF magnetron sputtering,” Journal of Crystal Growth 264 (2004) 327–333

4. B.R. Shim, H. Okita, K. Jegnathan, M. Shimizu, H. Okumura, “Structural Properties of GaN Films with AlN Buffer Layers with Varying Growth Temperatures by Plasma-Assisted Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. Vol. 42 (2003) pp. 2265–2269

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國際替代計量

在藍寶石基板上以兩階段成長法成長氮化鋁薄膜之光學和結構特性

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