氧化鋅奈米薄膜與奈米線於濕度感測上之應用

Applications of ZnO Films and Nanowires in Humidity Sensing

陳泓鈞(HONG-JUN CHEN)

指導教授 ： 章明

中原大學/工學院/機械工程研究所/碩士(2012年)

https://doi.org/10.6840/cycu201200658

摘要

本研究使用氣相法製備氧化鋅奈米薄膜與奈米線材，分別塗佈於指叉電極基板上作為濕度感測元件，探討400~700℃反應溫度對於氧化鋅奈米結構的影響，以及奈米薄膜與奈米線兩種結構的濕度感測差異。
氧化鋅奈米材料在12~92%相對溼度範圍內，所感測的阻抗差值隨生成溫度增加而增廣，製程溫度達700℃時，氧化鋅奈米薄膜的阻抗值範圍為1062.01*106Ω至0.214*106Ω，而氧化鋅奈米線的阻抗值範圍為856.177*106Ω至0.093*106Ω。
氧化鋅奈米薄膜與奈米線經靈敏度、遲滯效應與反應時間的比較後發現，奈米線感測器在遲滯效應上雖不及薄膜感測器，但在高濕度環境時有高靈敏度，且在相對濕度33~85%的濕度變化下，吸附反應時間僅需15.2秒，故本研究之感測器未來可用於高感度濕度感測之應用。

關鍵字

氧化鋅 ； 氣相法 ； 奈米薄膜 ； 濕度感測 ； 奈米線

並列摘要

Humidity sensors are fabricated using ZnO thin films and nanowires which grown via a vapor solid (VS) approach at various temperatures ranging from 400 °C to 700 °C to a comb type Pt interdigitated electrodes. Experiments were executed to observe the relationships between the structure ,relative humidity (RH) and resistance of these devices fabricated under various VS temperatures.
The ZnO thin films and nanowires grown at a temperature of 700 °C in using VS approach exhibits an optimum sensitivity to humidity. Thin film measured sensor resistance is from 1062.01×106 Ω to 0.214×106 Ω and nanowires' structure is from 856.177×106 Ω to 93×106 Ω for RH from 12% to 92%, respectively at room temperature (RT).
On further discussion has compared with sensitivity, hysteresis and adsorption response time between the ZnO thin films and nanowires. Although nanowires' structure is rather poor on hysteresis, it has an optimum sensitivity in high humidity environment. The adsorption response time just need 15.2 seconds during the relative humidity for 33%~85%. This shows that a high sensitivity humidity sensor can be expected with the proposed method.

並列關鍵字

humidity sensor ； nanowires ； nano film ； ZnO ； vapor solid

參考文獻

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