單分子層及梳狀高分子改質晶圓表面

Surface-modification of silicon surface with monolayer molecules and polymer brushes

劉權雄(Chuan-Hsiung Liu)

指導教授 ： 劉英麟

中原大學/工學院/化學工程研究所/碩士(2006年)

https://doi.org/10.6840/cycu200600247

摘要

摘要
本研究開發出兩種新的方法在晶圓表面製備有機單分子層，分別藉由環氧基與羧酸類化合物與晶圓表面末端Si-OH基反應，並進一步利用原子轉換自由基聚合在晶圓表面製備梳子狀高分子。並分別以X-射線光電子能譜儀及原子力顯微鏡鑑定表面之單分子層之表面化學結構和型態。
另外，以前述改質方法在晶圓表面導入單層聚半倍矽氧烷（POSS），並合成出Si-OGPOSS晶圓。用共聚合反應的方式形成PI/POSS之奈米複合膜並塗佈於Si-OGPOSS晶圓表面。POSS可有效地降低PI的介電常數；當含有20wt% POSS的奈米複合材，其介電常數從3.03降低至2.57。塗佈於Si-OGPOSS表面則進一步降低至2.49。結果顯示表面改質POSS可以有效降低介電常數。

關鍵字

梳子狀高分子

並列摘要

Abstract
This research develops two new methods to incorporate organic monolayers on a silicon (100) surface with oxirane and carboxylic acid compounds. Polymer brushes were also introduced to through the same manners and surface-initiated atom transfer radical polymerization. The chemical structures and the surface morphologies of the grafted monolayers were studied by X-ray photoelectron spectroscopy (XPS) and an atom force microscopy (AFM).
In addition, polyhedral oligomeric silsesquioxane (POSS) was incorporated to silicon surface to prepare Si-OGPOSS monolayer. Polyimide-tethered polyhedral oligomeric silsesquioxane are prepared by copolymerization reaction and was spun on the Si-OGPOSS wafer. Incorporation 20wt% POSS-NH2 to polyimides results in a reduction of dielectric constant of the polyimide nanocomposite film from 3.03 to 2.57. The dielectric constant further decreased to 2.49 for PI/POSS spun on Si-OGPOSS wafer.

並列關鍵字

surface-modification

參考文獻

4. B. Zhao, and W. J. Brittain, Prog. Polym. Sci., 25, 677, (2000)

7. V. Koutsos, E. W. van der Vegte, and G. Hadziioannou, Macromolecules, 32, 1233, (1999)

8. D. E. Bergbreiter, J. G. Franchina, and K. Kabza, Macromolecules, 32, 4993, (1999)

12. J. S. Wang, and K. Matyjaszewski, J. Am. Chem. Soc., 117, 5614 (1995)

13. K. Matyjaszewski, and J. Xia, Chem. Rev., 101, 2921 (2001)