本篇論文以脈衝式雷射沉積(Pulsed Laser Deposition)製備非晶相砷化硒薄膜,並利用X-ray 繞射(XRD)分析其結晶品質、利用掃描式電子顯微鏡(SEM)觀察其薄膜表面並觀察其厚度成長,並以電子探針顯微分析法(EPMA)分析薄膜成份;而在光學特性量測上,利用Vis-Near IR來量測其薄膜的穿透光譜,並利用所得到的數據透過Swanepoel's Method 來計算其薄膜厚度、折射係數、吸收係數以及Eg,並將此結果與已經發表的文獻作數據對比,再來觀察利用不同波長的雷射光觀察其薄膜的光致暗化(Photodarkening)現象,最後再利用砷化硒特有的光致暗化現象應用在側磨光纖(Side Polished Fiber)上,並作為一個全光控且可重複操作的光學元件。
We demonstrated the amorphous arsenic triselenium thin films by pulsed laser deposition. We analyzed the crystalline by XRD(x-ray diffraction), and studied the film thickness, roughness and deposition structure by SEM(scanning electronic microscope). From the data we received from the transmission spectrum, could be calculated by Swanepoel's Method and estimated the refractive index, film thickness and the band gap. We also made the comparison with the published paper so that we can fit the trend with those research. Then, we focused on the study of photodarkening effect by different wavelengths of laser. Finally, we deposited the arsenic triselenium thin films on the side-polished fiber to make the all-optically tunable fiber based on the photodarkening effect.