In this study, we analyze the raw data taken by Prof. Tsong’s laboratory for preparation of iridium single-atom tips (Ir-SATs). The Ir-SATs formation is known a complex function of surface cleanness, annealing conditions and oxygen exposure. To find out the optimum condition, based on the experimental results, statistical approaches are used to systematically qualify the effects of processing parameters on the final results of Ir-SATs formation. According to the idealized atomic stacking model, we define the deviations of pyramidal symmetry, stacking ratio, and area ratio to objectively evaluate the perfectibility of the single-atom tip. The results indicate that an idealized Ir-SAT can be easily obtained if oxygen exposure is 60 L and after a 510℃/5 min. mild annealing.
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