球形矽量子點的拉曼散射研究

THE SIZE OF SPHERICAL Si QUANTUM DOTS STUDIED BY RAMAN SCATTERING

顏弘洺(yen hung ming)

指導教授 ： 賈至達

國立臺灣師範大學/理學院/物理學系在職進修碩士班/碩士(2001年)

摘要

由於拉曼光譜的譜線分析，被認為與半導體的微細顆粒狀結晶之尺寸不同有關。我們希望利用熱蒸鍍法製備出矽量子點的樣品，並透過擬合及解釋拉曼光譜線的訊息與穿透式電子顯微鏡(TEM)影像之間的比較，找出拉曼光譜與球狀矽量子點大小之間的關係。實驗結果，我們證明了使用熱蒸鍍法確實可以製備出奈米大小的矽量子點，並發現製備樣品的壓力條件與其拉曼光譜線中心位置有確定的關係。

關鍵字

量子點 ； 球形矽量子點 ； 拉曼散射

並列摘要

THE SIZE OF SPHERICAL Si QUANTUM DOTS STUDIED BY RAMAN SCATTERING
Spherical Silicon quantum dots which have been grown by thermal evaporation method were examined by Raman scattering, TEM and optical reflectivity measurements. The TEM pattern reveals the size of quantum dots at different growth condition. The Raman spectra have shown the correlation of phonon energy and dots size.
The comparison of size obtained from TEM and Raman measurement has shown consistent, therefore, we found the size of silicon quantum dots size can be measured from sample's Raman spectra , and the different pattern related to the different growth condition, similarly to the dot size. We also got the relationship between sample growth pressure and its Raman spectra.

並列關鍵字

SPHERICAL Si QUANTUM DOTS ； RAMAN SCATTERING ； QUANTUM DOTS

參考文獻

1.H. Richter, Z.P. Wang and L. Ley, Solid State Commun. 39, (1981)625

2.1.I.H. Campbell and P.M. Fauchet, Solid State Commun. 58, (1986)739

9. K. Kimoto, and I. Nishida: Japan. J. Appl. Phys. 6(1967)1047.

10.N. Wada: Japan J. Appl. Phys. 6(1967)553.

11.N. Wada: Japan J. Appl. Phys. 7(1968)1287.