電漿輔助化學氣相沉積法成長奈米碳管應用於發光二極體之研究

Growth of Carbon Nanotubes Using Plasma Enhanced Chemical Vapor Deposition and Apply to Thermal Dissipation of Light Emitting Diode

黎曜華(Yao-Hua Li)

指導教授 ： 陳耀煌

共同指導教授 ： 甘廣宙(Kwang-Jow Gan)

崑山科技大學/工程學院/電子工程研究所/碩士(2011年)

摘要

近年來發光二極體(Light Emitting Diode，LED)開始應用於生活上，隨著科技的進步和環保意識的抬頭LED漸漸取代傳統的照明光源，LED具有較佳的省電效果及壽命長，LED又可分為高功率(Hight power)及低功率(Low power)LED，其中高功率LED較不易散熱，LED其實是高熱的發光元件，但高功率LED產生的熱量卻遠遠超過傳統的低功率LED，LED晶粒因為體積小封裝散熱不易，當熱無法從P-N接面(P-N junction)造成光衰竭與波長飄移的影響會使LED壽命降低，當內部元件受到熱膨脹係數不均，使得元件承受過大機械應力而損毀。
本論文利用奈米碳管的熱傳導特性及良好的混膠方法改善其接面問度問題，而奈米碳管具有高導熱係數3000~6000(W/mK)，一般混合膠體方法採用直接加入粉體攪拌混合，通常混合效果較不均勻，因此本研究將不同重量比例奈米碳管摻雜於環氧樹脂(Epoxy)用熱處理法混合膠體改善LED P-N接面的熱傳導問題。
本文利用電漿輔助化學氣相沉積法(Plasma Enhanced Chemical Vapor Deposition，PECVD)成長奈米碳管，經由SEM分析奈米碳管能均勻分散於環氧樹脂內，並且本研究由順向偏壓法量測接面溫度分析： Epoxy (120℃)、 Epoxy ＋1%CNT(113℃)、Epoxy ＋5%CNT(101℃)、Epoxy ＋10%CNT(100℃)、Epoxy ＋15%CNT(103℃)、Epoxy ＋20%CNT(110℃)，從數據得知奈米碳管摻雜環氧樹脂混合後接面溫度能降低16%。

關鍵字

奈米碳管 ； 發光二極體

並列摘要

In recent years, light emitting diodes (Light Emitting Diode, LED) began to be used in life, as the technology development and increase of the environmental consciousness, gradually to replace the traditional illumination by LED lighting. The LED are possess better saving power and long lifetime, LED can be divided into high-power (Hight power) and low-power (Low power) LED, among the high-power LED is comparative difficult dissipation heat. The LED is a light-emitting devices of high fever, but the heat of generated by high-power LED was significantly exceed more than the low-power LED of traditional. Due to grain size of the LED is very narrow create package after dissipation heat was not easy, when heat not from the PN junction (PN junction) to dissipation will result in light loss and the wavelength drift caused reduce to lifetime. When the internal devices accepted thermal expansion is uneven, caused the devices accept outride load mechanical stress bring about damage.
This research was used thermal conductivity of the carbon nanotubes and well mixed gel method to improve the junction effect. However, the carbon nanotubes have high thermal conductivity coefficient 3000 ~ 6000 (W / mK), The mixed gel method apply direct add into powder to synthesis. In this study, the differently weight ratio of carbon nanotubes doped the Epoxy to improve thermal conductivity characteristic of the LED P-N junction by mixed gel method of treatment.
In this papers, growth of the carbon nanotubes by using the plasma-enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD), analyzed the uniform carbon nanotubes in epoxy by scanning electron microscope, and investigated the junction temperature by forward bias voltage method: Epoxy (120 ℃), Epoxy +1% CNT (113 ℃), Epoxy +5% CNT (101 ℃), Epoxy +10% CNT (100 ℃), Epoxy +15% CNT (103 ℃), Epoxy +20% CNT (110 ℃), form above data shown the carbon nanotube doped epoxy could be reduced the junction temperature by 16%.

並列關鍵字

Carbon Nanotubes ； Light Emitting Diode

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