Nitride-based high-power flip-chip light emitting diode (FC LED) with patterned sapphire surface (PSS) was proposed and realized. The generated light in the active layer is mostly absorbed by the gradually disappears due to total internal reflection . It is therefore very important that the photons generated from LEDs experience multiple opportunities of escaping to improve the light extraction efficiency. We use the of 0, 30, 60, 120 minutes different dry etching time, compare the optical and electrical properties and observe the graphic changes. Under 350 mA current injection, it was found that output powers were 460 and 491 mW for the conventional FC LED and FC LED with patterned sapphire surface, respectively. In other words, we can enhance the light output power by 10% without increasing operation voltage of the fabricated LED. The enhancement efficiency can be simulated and the simulated results showed the same trend as the results of experiment.