具中間置入層之氮化鎵系列紫外光檢測器與高速電晶體之研究

GaN-based high electron mobility transistors and photodetectors with the intermediate layer

王子豪(Zi-Hao Wang)

指導教授 ： 張品全

崑山科技大學/工程學院/光電工程研究所/碩士(2012年)

摘要

本研究中，吾人以有機金屬化學氣相磊晶法成長高溫氮化鎵/低溫氮化鋁鎵/高溫氮化鎵三明治結構，應用於異質接面高電子移動率電晶體與紫外光感測器。此種新式結構比起傳統的異質接面結構於電晶體特性上有更高的汲極電流與崩潰電壓，更低的閘極電流、二維電子氣濃度與轉導值。這提供了一簡單的方式成長高品質的氮化鎵薄膜，以應用於高頻、高功率與低雜訊元件。同時，此結構亦可用於製作高效率金半金紫外光感測器。由於其提供了一電場強度較強的區域予光載子的流動，使元件之光響應大幅增加。此結構結合光元件與電元件，可進而實現光電積體電路化的目標。

關鍵字

氮化鋁鎵 ； 氮化鎵 ； 高速電晶體 ； 光檢測器

並列摘要

AlGaN/GaN heterostructure high electron mobility transistors (HEMTs) based on HT-GaN/LT-AlGaN/HT-GaN structure by metal-organic vapor phase epitaxy have been investigated and compared with the standard HEMT. The new configuration outperformed the one without in several aspects, exhibiting higher drain current and breakdown field, lower gate and buffer leakage current, and larger two-dimensional electron gas concentration and transconductance. This provide a simple method to grow high quality epitaxial GaN for high-stress, low-noise, high-frequency, and high-power HEMT applications. In the meanwhile, larger photoresponsivity can be achieved due to the enhanced electric field strength by utilizing such a structure to the application in metal-semiconductor-metal photodetectors. This structure combine the optoelectronic and electronic devices to realize the goal of optoelectronic integrated circuits (OEIC).

並列關鍵字

AlGaN ； GaN ； HEMT ； photodetectors

參考文獻

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